1N21... Point Contact Mixer Diodes. from an ALPHA datasheet Maximum Ratings: Power Dissipation = 100mW Derating above 25 grdC. : 8 mW/grdC. Top = Tstg = -55 to 150 grdC. Characteristics: Frequency Range: 2 GHz to 4 GHz, S- Band Test Frequency : 3.1 GHz L.O.Power : 0.5 mW Z if : 1N21C : min 300 Ohm, max 500 Ohm 1N21D : min 325 Ohm, max 425 Ohm 1N21E : min 350 Ohm, max 450 Ohm 1N21F : min 350 Ohm, max 450 Ohm 1N21G : min 350 Ohm, max 450 Ohm VSWR : 1N21D : max 1.5 1N21E,F,G : max 1.3 Proof Burnout : 5 Ergs Noise Figure at N?= 1.5 dB: 1N21C : max 8.3 dB 1N21D : max 7.3 dB 1N21E : max 7 dB 1N21F : max 6 dB 1N21G : max 5.5 dB Suffix: R = Reverse, M = Matched Pair, W = Reversible ______________________________________
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______________________________________ 1N23... Point Contact Mixer Diodes. from an ALPHA datasheet Maximum Ratings: Power Dissipation = 100mW Derating above 25 grdC. : 8 mW/grdC. Top = Tstg = -55 to 150 grdC. Characteristics: Frequency Range: 8 GHz to 12 GHz, X- Band Test Frequency : 9.4 GHz L.O.Power : 1 mW Z if : 1N23D : min 350 Ohm, max 450 Ohm 1N23E : min 335 Ohm, max 475 Ohm 1N23F : min 335 Ohm, max 465 Ohm 1N23G : min 335 Ohm, max 465 Ohm 1N23H : min 335 Ohm, max 465 Ohm VSWR : max 1.3 Proof Burnout : 2 Ergs Noise Figure at N?= 1.5 dB (Index leider nicht lesbar): 1N23D : max 7.8 dB 1N23E : max 7.5 dB 1N23F : max 7 dB 1N23G : max 6.5 dB 1N23H : max 6 dB Suffix: R = Reverse, M = Matched Pair, W = Reversible ______________________________________
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______________________________________ 1N2163 Temperature Compensated Silicon Zener Reference Diode Internal Zener diode and serial forward diode. Polarity : Cathode to Case Maximum Ratings : DC Power Diss. at Ta=25 grdC. = 750mW Tj = -55 to 200 grdC. Tstg = -65 to 200 grdC. Characteristics : Zener Voltage at Iz=10mA : 9.4 V +/- 0.4 V Type suffix A : +/- 0.2 V Dynamic Impedance at Iz=10mA superimposed 1mA RMS, 60 Hz : max 15 Ohm Temerature Coefficient : 0.005 % / grdC. Max Voltage Change, test Temp. 0, +25, +70 grdC. : at Iz=10mA : max 0.033 V ______________________________________
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1N4153 switching diode
DO35 Package
Planar passivated chip, metallurgical bond.
Maximum Ratings:
Reverse Breakdown Voltage : 75 V
Peak Working Voltage : 50 V
Average Current : 150 mA ( UNITRODE datasheet)
Average Rectified Current : 100 mA (FAIRCHILD datasheet)
Continuous Forward Current : max 300 mA (FAIRCHILD datasheet)
Peak Repetitive Current: max 400 mA (FAIRCHILD datasheet)
Peak Forward Surge Current, 1 sec : max 1 A and
1 us : max 4 A (FAIRCHILD datasheet)
Surge Current, 1 us : 2 A ( UNITRODE datasheet)
Top = Tstg = -65 to 200 grdC.
Characteristics :
Forward Voltage at If=0.1 mA : min 0.49 V, max 0.55 V
at If=1 mA : min 0.59 V, max 0.67 V
at If=10mA : min 0.7 V, max 0.81 V
Reverse Current at Vr=50V : max 0.05 uA
Reverse Recovery Time at If=Ir=10mA, recovery to 1 mA : max 4 ns
at If=10mA, Vr=-6V, R load = 100 Ohm : max 2 ns
Capacitance at Vr=0, f=1MHz : max 4 pF
______________________________________
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______________________________________ 1N4247 rectifier diode UNITRODE Maximum Ratings: Reverse Voltage : 600 V Average Current at 100 grdC : 1 A at 150 grdC.: 0.33 A Non Repititive Sinusoidal Surge Current : 25 A Operating and Storage Temp.: -65 to 175 grdC. Specifications at 25 grdC.: Reverse Breakdown Voltage at 100 uA : min 720V Forward Voltage at 3A(pk) : min 0.6 V, max 1.3 V(pk) Reverse Recovery Time at If=0.5A, Ir=1A, Irec=0.25 A: max 5 us. ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
1N4744 Zenerdiode
in plastic case, the Cathode has the colour band
Maximum Ratings :
Pd = 1 W bis 50 grdC.
Derating Faktor : 6.67 mW/grdC.
Junction and Storage Temp.: -65 to 200 grdC.
Characteristics at 25 grdC.:
Nominal Zener Voltage at Iz=17mA : 15 V +/- 10 %,
for A-Type: +/- 5 %
Zener Impedance at Iz=17mA : max 14 Ohm
at Iz = 0.25 mA : max700 Ohm
Reverse Leakage Current at Vr=11.4V : max 5 uA
Surge Current IR= 304 ( mA ? , I miss any declaration )
Max. Zener Current : 61 mA
Forward Voltage at If=200mA : max 1.5 V
______________________________________
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1N5153 Silicon Step-recovery Power Varactor,
Cartridge case, Anode = long pin.
Maximum Ratings:
Reverse Voltage : 75 V
Forward Current : 0.25 A
RF- Power Input : 15 W
Total Device Dissipation at 75 grdC. : 5.5 W
Derate above 75 W : 45 mW/grdC.
Tj = 200 grdC.
Thermal Resistance : typ 19 grdC./W, max 23 grdC./W
Characteristics:
Breakdown Voltage at Ir=10uA : min 75 V, typ 80 V
Reverse Current at Vr=60V : typ 0.5 uA, max 1 uA dc
at 150 grdC.: max 100 uA dc
Series Resistance at Vr=6Vdc, f=50 MHz : typ 0.5 Ohm
Capacitance Junction + Case at Vr=6V, f=1MHz :
min 5 pF, typ 5.8 pF, max 7.5 pF
at Vr=70V : typ 4 pF
Figure of Merit at Vr=6V, f=50MHz : Q = typ 1100
Doubler Test, f in = 1 GHz, f out = 2 GHz, P in = 12 W :
Power Output : min 6 W, typ 7.2 W
Efficiency : min 50%, typ 60 %
The datasheet has a test circuit but without details for the
input coupling. It seems to be an inductive coupled lead in
a coax cavity ( as from the text ) or helix ( as seen in the
draving ). The high end of the coupling is connected with
the varactor anode and the output helix/coax cavity. The lower
side of the coupling is connected via 0.8pF to 10 pF adjustable
capacitance to Gnd. The dc- current of the diode is derived
from the anode via 20 kOhm to 1 MOhm pot. to the cathode at Gnd.
An other typenumber for this device from the MOTOROLA series
is MV1808C.
______________________________________
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______________________________________ 1N5158 PNPN 4-layer diode Absolute Maximum Ratings at 25 grdC.: Peak Reverse Blocking Voltage: 10 V Continuous Forward Current: 150 mA Peak Pulse Current, 50us max. Pulse Width: 10 A Steady State Power Dissipation at 50grdC.: 150 mW Derate above 50grdC.: 1.5 mW/grdC. Operating Junction Temp.: -65 to 150 grdC. Characteristics: Forward Breakover (Switching) Voltage: min 8V, max 10V Forward Breakover (Switching) Current: typ 5 uA, max 50 uA Forward Blocking Current at 7.5V: typ 1 uA, max 5 uA Reverse Blocking Current at -10V: typ 2 uA, max 10uA Holding Current: min 1mA, typ 4mA, max 20mA Forward On Voltage at If=150mA: typ 1 V, max 1.5 V Junction Capacitance: typ 42 pF Turn On Time: typ 50 ns Turn Off Time: typ 100ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 1N5990 Zenerdiode Maximum Ratings: Pd at 50 grdC.: 500 mW Derate above 50grdC.: 3.33 mW/grdC. Temp : -55 to 200 grdC. Max DC Zener Current : 128 mA Characteristics: Vz at Iz = 5 mA : 3.9 V Zz at Iz = 5 mA : 95 Ohm Zz at Iz = 0.25 mA : 2500 Ohm Max Reverse Leakage Current at Vr=1V : 25 uA ______________________________________
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1N6095/6096 Power Schottky Rectifier
MOTOROLA, UNITRODE
DO4 Metal Case, #10-32 UNF-2A, Cathode is stud
Maximum Ratings:
Peak Repetitive Reverse Voltage/
Working Peak Reverse Voltage/
DC Blocking Voltage: 1N6095 : 30 V, 1N6096 : 40 V
Non repetitive Peak Reverse Voltage (UNITRODE only):
1N6095 : 36 V, 1N6096 : 48 V
Average Rectified Forward Current at Tc=70grdC. : 25 A
at 105 grdC. : 10 A
Non repetitive Peak Surge Current (halfwave 60 Hz, 8.3mS):
400 A
Peak Operating Junction Temp. : 150 grdC.
Tj, Tstg = -65 to +125 grdC.
Thermal Resistance Junction to Case : 2 grdC./W
Characteristics:
Forward Voltage at If=78.5 A , Tc=70 grdC.: max 0.86 V 1)
Reverse Current at rated voltage, 125 grdC.: max 250 mA 1)
Capacitance at Vr=1V, 100kHz>f>1MHz, 25grdC.:typ 6000 pF
1)instantaneous at Pulse Test: Width 300us, Duty Cycle 2%
From a diagram Typical Forward Voltage vs. Instantaneous
forward Current:
at Tj=25 grdC.: 0.35V/1A; 0.43V/10A; 0.75V/100A; 1V/200A
at Tj=150grdC.: 0.18V/1A; 0.32V/10A; 0.63V/100A; 0.75V/200A
______________________________________
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______________________________________ 1N936 temperature compensated zener reference diode. Absolute Maximum Ratings: Power Dissipation: 500mW at 25 grdC Junction Temperature: -55 to 175 grdC Characteristics: Zener Voltage at Iz=7.5 mA(very important!), 25grdC: 9.0 V +/- 5 %. Maximum Voltage Change for Temp Change 0 to 75 grdC at Iz=7.5mA: max +/- 0.033 V (for other than 7,5mA no temp.compensation!) Temperature Coefficient: 0.005 % / grdC Dynamic Impedance: max 20 Ohm ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 1N951 Capacitance Variation Diode TRW 1960 !! Absolute Maximum Ratings : Vr = 80 V Junction and Storage Temp.: -65 to 150 grdC. Characteristics: Ir at Vr=80V : at 25 grdC.: max 1 uA, at 150 grdC.: max 50 uA Capacitance at 4V : 50 pF +/- 20 % at 0.1 V : typ 120 pF at 80 V : typ 12 pF Change with Temperature : 0.0002/grdC. Q at 5 MHz : typ 330 at 50 MHz : min 7 ? ! ? If your application uses the Vr= 80 V you will have a problem to replace.... ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 1S1585/ 1S1587 Silicon switching Diode: Maximum Ratings: Vrm : 1S1585: 90 V 1S1587: 55 V Vr : 1S1585: 80 V 1S1587: 50 V Ifm : 1S1585: 480 mA 1S1587: 400 mA I average : IS1585: 150 mA 1S1587: 130 mA Ifsm surge, 1 sec = 700 mA , 1S1587: 600 mA P = 300 mW Tj = Tstg = -65 to 175 grdC. Characteristics: Vf at If=100mA : max 1 V, 1S1587: max 1.2 V Ir at Vr=80V (1S1587:at 50V) : max 0.5 uA Ct at Vr=0 : max 2 pF t rr at If=10mA,Vr=6V,Rl=100 Ohm : max 2 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 1S2588 Si VHF switching diode: Maximum Ratings: Vr = 30V I average = 50 mA Ifsm surge, 10 msec = 1 A P = 100 mW Tj = Tstg = -65 to 175 grdC. Characteristics: Vf at If=100mA : max 1 V Ir at Vr=15V : max 0.1 uA Ct at Vr=15V : max 2 pF Rf at If=10mA, f=100MHz : max 0.6 Ohm From a diagram, Rf vs. If at 1 MHz: 4 Ohm/0.1 mA ; 3 Ohm/ 1 mA ; 2 Ohm/ 5mA ; 1.6 Ohm/ 20mA ______________________________________
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______________________________________ 1S2688EB manufactured 1985 by Japan Radio Corporation Reverse Voltage max 15 V Reverse Current at Ur=10V : 0.1 uA Capacity at Ur=1V, f=1MHz: 45 ... 50 pF (C at 1V) / (C at 10V) : min 2 , max 2,4 Q at Ur=1V, f=50MHz : typ 50 Max Junction Temperature 150 grdC Thats all, no diagrams, no declaration for other appendix than ..EB ______________________________________
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______________________________________
1S921
from a FAIRCHILD datasheet
General purpose Diode in DO-35 package
Absolute Maximum Ratings:
Working Inverse Voltage : 100 V
Average Forward Current : 200 mA
Peak Forward Current : 600 mA
Surge , pulse 1 s : 1 A
pulse 1 us : 4 A
P tot at 25 grdC.: 500 mW
T junction = 175 grdC.
T stg = -65 to 200 grdC.
Characteristics at 25 grdC.:
Inverse Current at 100V, : max 100 nA
at 100grdC.: max 10 uA
Forward Voltage at If=100mA : max 1.2 V
Capacitance at Vr=0, f=1MHz : max 6.5 pF
Stored Charge at If=10mA, Vr=10V : max 12 nC
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 1SS43 Silicon Epitaxial Schottky Barrier Diode for ring modulator because of uniform Vf characteristics. Absolute Maximum Ratings: Vr = 5 V Ifm = 90 mA Io = 30 mA Tstg = -65...150 grdC. Characteristics at 25 grdC.: Vf at If=10mA : min 460 mV, max 550 mV Ir at Vr=5V : max 1 uA delta Vf at If=10mA : max 10 mA Ct at Vr=5V, f=1MHz : min 0.55 pF, max 0.75 pF The datasheet has 2 diagrams: If vs. Vf, beginning at 0.01mA/0.23V; 1mA/0.35V; 10mA/0.51V; end near 30mA/O.83V Terminal Capacitance Ct vs. Vr 1.2pF/ 0 V 0.7pF/ 2.2 V 0.67pF/ 5.2 V ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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1SS94 ULTRA-HIGH SPEED SWITCHING DIODE
ROHM
Absolute Maximum Ratings:
Peak Reverse Voltage: 40 V
DC Reverse Voltage : 35 V
Peak Forward Current : 600 mA
Average Rectified Current : 200 mA
Peak Forward Surge Current 1 us : 4000 mA
Power Dissip.: 300 mW
Junction Temp.: 175 grdC.
Storage Temp.: -65 ... 175 grdC.
Characteristics at 25 grdC. :
Forward Voltage at If=100mA : max 1 V
Reverse Current at Vr=35V : max 0.5 uA
Capacitance between terminals at Vr=0V, f=1MHz : max 3 pF
Reverse Recovery Time at Vr=6V, If=10mA, Rgen=Rload=50Ohm :
max 2 ns
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 1SS97 Silicon Epitaxial Schottky Barrier Diode, for UHF Band Mixer. Absolute Maximum Ratings: Vr = 10 V If = 35 mA Pd = 150 mW Tj = 175 grdC. Tstg = -65...175 grdC. Bo = 2.0 erg Characteristics at 25 grdC.: Vf at If=10mA : min 460 mV, max 550 mV Vr at Ir=10uA : min 10V Ct at Vr=0V, f=1MHz : max 1 pF delta Vf at If=10mA : max 10 mV delta Ct at Vr=0, f=1MHz: max 0.2 pF The datasheet has 3 typical diagrams: If vs. Vf, beginning at 0.01mA/0.23V; 1mA/0.35V; 10mA/0.51V; end near 45mA/O.87V Terminal Capacitance Ct vs. Vr: 0.9pF/075V 0.6pF/3V 0.55pF/5V Typical Reverse Current Ir vs. Vr: 1.8uA/1V; 3.7nA/4V; 5.5nA/6V; 8nA/8V; 9.5nA/near 10V ______________________________________
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______________________________________ 1SS99 Si Epitaxial Schottky Barrier Diode Typical application: UHF Band Detector, Mixer. Glass Package DO35. Absolute Maximum Ratings at 25 grdC.: Vrm = 5 V If = 30 mA Pd = 150 mW Tj = 175 grdC. Tstg = -65 to 175 grdC. Bo = 2 erg ( ? I don't know what it meens, declaration uses japanese language) Characteristics at 25 grdC.: Vf at If=1mA : max 0.23 V If at Vf=0.5V : min 30 mA Ir at Vr=0.5V : max 25 uA Terminal Capacitance Ct at Vr=0.2V, f=1MHz : max 0.9 pF From a diagram Ct vs. Vr: 0.65 pF at 0.1V; 0.5pF at 0.5V; 0.4 pF at 3V From a diagram Vf vs. If: At If=0.1mA : Vf = 0.12 V At If = 1mA : Vf = 0.19 V At If =10mA : Vf = 0.3 V (At If=100mA : Vf = 0.7 V ) ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ 1SS226 Dual Ultra High Speed Switching Diode TOSHIBA SOT23 mod, Marking C3 A1=C2 ___|___ | | |_______| | | C1 A2 also Serienschaltung der Dioden Maximum Ratings : Vrm = 85 V Vr = 80 V Ifm = 300 mA 1) I average = 100 mA 1) I surge (10ms) = 2 A 1) P = 150 mW Tj = Tstg = -55 to 125 grdC. Characteristics: Vf at If=1mA : typ 0.6 V at If=10mA : typ 0.72 V at If=100mA: typ 0.9 V, max 1.2 V Ir at Vr=80V : max 0.5 uA Total Capacitance at Vr=0, f=1MHz: typ 0.9 pF, max 3 pF 2) Reverse Recovery Time at If=10mA, Rin=Rout=50 Ohm : typ 1.6 ns, max 4 ns 3) 1) Unit Rating. Total Rating = Unit Rating x 0.7. Werte gelten, wenn nur eine Diode in Betrieb. Wenn beide voll ausgelastet, angegebene Werte mit 0.7 multiplizieren! 2) Von einem Diagramm: bis Vr=80V sinkt C nur auf 0.7pF 3) Von einem Diagramm: bis If=50mA steigt trr auf typ 24 ns für kleine Ströme tut sich wenig: 0.8ns unter 1 mA ______________________________________
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______________________________________ 1SS242 UHF band mixer Schottky Barrier Diode Maximum Ratings at 25 grdC.: Peak Reverse Voltage : 5 V Forward Current : 30 mA Junction Temp.: 125 grdC. Storage Temp. : -55 to 125 grdC. Characteristics : Forward Voltage at If=2mA : typ 0.25 V Forward Current at Vf=0.5V : min 30 mA Reverse Current at Vr=0.5 V : max 25 uA Total Capacitance at Vr=0.2V, f=1MHz : 0.6 pF From a diagram Total Capac. vs. Reverse Voltage: 0.65 pF at 0.1 V to 0.45 pF at 3 V ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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1SV207 Variable Capacitance Diode
SOD- Case 3,7 x 1,6 mm
Hersteller = ROHM >(hat .PDFs im Internet)
Absolute Maximum Ratings:
Vrm = 35V
Vr = 30V
Temp = -30 to 120 grdC
Characteristics:
Capacit. at Vr=2V : 26,9 ... 33,1 pF
...at Vr=25V : 2,68 ... 3.12 pF
at f= 470 MHz, Ct=14pF : Rs = 0,8 Ohm
Mehr gibt das japanisches Datenblatt (under development) nicht an.
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1SV226 Variable Capacitance Diode
TOSHIBA
3mm Plastic Case , Cathode Mark
Maximum Ratings:
Reverse Voltage : 30 V
Peak Reverse Voltage : 35 V
Junction and Storage Temp : -44 to 125 grdC.
Characteristics at 25 grdC.:
Reverse Voltage for Ir=1uA : min 30 V
Reverse Current at Vr=28V : max 10 uA
Capacitance at Vr=2V , f=1MHz :
min 41 pF, typ 45 pF, max 49.5 pF
at Vr=1V : typ 55 pF (from a diagram)
at Vr=25 V : min 2.7 pF, typ 3 pF, max 3.4 pF
Capacitance Ratio C2/C25 : min 14, typ 15
Series Resistance at Vr=5V, f=470MHz : typ 1.05 , max 1.25 Ohm
at Vr=10V : typ 0.8 Ohm
at Vr=25V : typ 0.2 Ohm (selected from a diagram).
at Vr=5V, selected from an other diagram:
50 MHz: 0.9 Ohm,
100 MHz: 0.85 Ohm,
250 MHz: 0.9 Ohm,
500 MHz: 1.05 Ohm.
______________________________________
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______________________________________ 1SV34 Silicon PIN Diode for Variable Attenuator Maximum Ratings: Vr = 100 V If = 50 mA Ifm = 150 mA P = 250 mW Tstg = Tj = -65 to 175 grdC. Characteristics : Vf at If=50 mA : typ 0.95 V, max 1.1 V Ir at Vr=100V : max 10 uA Capacit. at Vr=50V, f=1MHz : typ 0.3 pF, max 0.5 pF Resistance at f=100MHz : at If=10mA : min 6 Ohm, typ 8 Ohm, max 10 Ohm at If=10uA : min 2000 Ohm, typ 2500 Ohm T at If=10mA : typ 2 us ? Trr at If=10mA, Ir=16mA, Zgen=ZL=50 Ohm : typ 1 us ? ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!