RCA 40349 NPN Silicon Transistor Case TO5 : Nose - Emitter - Base - Collector=Case Maximum Ratings: Vcbo = 160 V Vceo = 140 V Vebo = 7 V Ic = 1.5 A Ptot = 8.75 W at case=25 grdC. Tj = Tstg = -65 to 200 grdC. Thermal Resistance Junction to Case : max 20 GrdC./W Characteristics : Transit Frequency at Vce=10V, Ic=10mA : 1 Mhz DC Current Gain at Vce=4V, Ic=150mA : 25 ... 100 Vce(sat) at Ic=150mA, Ib=15mA : max 0.5 V ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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RCA9202 NPN Darlington
From RCA Databook Bipolar Power Devices 1989:
Standard TO220- pinning: B - C - E
RCA9202 NPN Darlington, 2 internal resistors B1E1 + B2E2,
internal diode: Anode= Emitter of Ts2, Cathode= Collector.
Absolute Maximum Ratings :
Suffix: A B C
Vcbo = 300 V 350 V 400 V (at Ie = 0 )
Vceo = 300 V 350 V 400 V (sustaining)
Vce = 250 V 300 V 350 V (at Iceo = 0.5 mA )
Vebo = 5 V (at Iebo = 10 mA)
Ic = 4 A
Icm = 8 A
Ib = 0.25 A
Pt at 25 grdC. = 65 W
derating above 25 grdC. : 0.52 W/grdC.
Tj = Tstg = -65 to 150 grdC.
Thermal Resistance Junction to Case : max 1.92 grdC./W
Characteristics :
h FE at Vce=3V, Ic=2A : min 750
Vce(sat) at Ic=2A, Ib=0.1 A : max 1.5 V
Cobo at Vcb=10V, f=1MHz : typ 100 pF
Cibo = typ 420 pF (from a diagram)
From the Safe Operating Area diagram:
Continuous : Ic=4A until Vce=17V; Knee at 1.4A / 45V ;
Second Breakdown limited until 40mA at 300 V.
50 ms pulsed : Ic=8A until Vce=22V; without Knee
S.B.limited until 60mA at 300V.
Single Pulse 1 ms : Ic=8A until Vce=100V,
without Knee until 150mA at 300V.
From a Saturated Switching Time vs. Ic diagram:
for Vcc=12V, Ic/Ib = 20, (R load, R gen not specified !)
Turn on time: from 0.5 us at 1 A until 1.8 us at 6 A.
Storage time: from 5.8 us at 1 A until 3.5 us at 6 A.
Fall Time : 1us/0.5A, 3us/1A, 5.5us/2A, 7us/3.5A, 7.8us/6A
for Vcc=250V and Ic/Ib =250 the result is totally different:
Turn on time: 3us/0.5A, 2us/1A, 0.8us/3A, 1.2us/6A
Storage time: 8us/0.5A, 12us/2A, 5us/6A
Fall time : From 0.8us/0.5A until 4us/6A (linear)
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ RFH30N15 Power MOSFET von Harris = INTERSIL Absolute Maximum Ratings: Vdss = 150V Id = 30A Id peak = 100A Vgs = +/- 20V Pd = 150W Thermal Resistance Junction to case: max 0.83 grdC/W Characteristics: Vds (on) at Id=15A: max 8V at Id=30A: max 10V Rds (on) at Vgs= 10V, Id=15A: max 0.075 Ohm Forward Transconductance at Vgs=10V, Id=15A: min 10 mho Input Capacit.at Vds=25V, Vgs= 0V: max 3000pF Output Cap.= max 1200pF Reverse Cap. = max 500pF Times at Vds=75V, Id=15A, Rg=50Ohm : Turn On Delay: max 115ns Rise: max 630ns Turn Off Delay: max 450ns Fall: max 375ns Antiparallel Diode forward Voltage: max 1.4V at 15A Reverse Recovery Time at 4A, 100A/us: typ. 200ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ RFK25P10 P-Channel Enhancement Mode Power FET from the databook HARRIS Power MOSFETs 1992. Absolute Maximum Ratings at 25 grdC.: Vds = -100 V Vdgr = -100 V Vgs = +/- 20 V Id = -25 A Id pulsed = -60 A Pd = 150 W, above 25grdC. derate linearly 1.2 V/grdC. Op. and Storage Junction Temp.: -55 to 150 grdC. Thermal Resistance Junction to Case: max 0.83 grdC./W Characteristics at 25grdC.: Gate Threshold Volt. at Vds=Vgs, Id=1mA : min -2V, max -4V Idss at Vds=-80V : -50uA Vds (on) at Id=25A,Vgs=-10V : max 4.5 V Static Drain Sorce ON Resistance at Id=12.5 A, Vgs=-10V : max 0.15 Ohm Forward Transconductance at Id =12.5A, Vds=-10V : min 4 S Capacitances at Vgs=0,Vds=-25V,f=1MHz : Input Cap.: max 3000 pF Output Cap.: max 1500 pF Reverse Transfer : max 600 pF Times at Id=12.5A,Vds=50V,Vgs=-10V,Rgen=Rgs=50 Ohm : Turn On Delay : max 50 ns Rise : max 250 ns Turn Off Delay : max 400 ns Fall : max 250 ns Source Drain antiparallel diode Forward Voltage at Isd = -12.5A : max 1.4 V Reverse Recovery Time at If=4A, dIf/dt=100A/us: typ 300 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ RFP15N05L N-Channel Logic Level Power FET: from the HARRIS databook Power MOSFETS 1992: Absolute Maximum Ratings: Vds = 50 V Vdgr at Rgs=1MOhm : 50 V Vgs = +/- 10 V Id RMS continuous : 15 A Id pulsed : 40 A Pd = 60 W, derating above 25 grdC.: 0.48 W/grdC. Tj=Tstg = -55 to 150 grdC. Thermal Resistance Junction to Case: 2.083 grdC./W Characteristics at 25 grdC.: Gate Threshold Voltage at Id=1mA, Vds=Vgs : min 1 V, max 2 V Idss at Vds=40V : max 1 uA (at 125 grdC.: max 50 uA ) Igss at Vgs=+/-10V, Vds=0 : max 100 nA Rds(on) at Id=7.5 A, Vgs=5V : max 0.14 Ohm Vds(on) at Id=15A, Vgs=5V : max 3 V Forward Transconductance at Id=7.5A, Vds=10V : min 4 S Capacitances at Vds=25V, Vgs=0V, f=1MHz : Input : max 900 pF Output : max 450 pF Reverse Transfer : max 200 pF Times at Vdd=30V, Id=7.5V, Rgs=6.25 Ohm, Vgs=5V : Turn On Delay : max 40 ns Rise : max 325 ns Turn Off Delay : max 325 ns Fall : max 325 ns Source Drain Diode Forward Voltage at Isd=7.5 A : max 1.4 A Reverse Recovery Time at If=4A, dIf/dt=100A/us : typ 225 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ RFP8P08 P Channel Enhancement Mode Power FET. TO 220 Gehäuse: Anschlüsse, wenn man auf die Kunststoffseite schaut und das Loch oben ist, von links nach rechts : Gate, Drain, Source Absolute Maximum Ratings at 25 grdC.: Vds = -80 V Vdgr at Rgs=1mOhm : -80 V Id = 8 A rms Id peak = 20 A Vgs = +/- 20V Pd = 75 W, above 25 grdC. derate 0.6 W/grdC. Thermal Resistance Junction to case: max 1.67 grdC./W Characteristics: Vds (on) at Vgs=-10V, Id=4 A: max -1.6 V at Id=8 A: max -4 V Rds (on) at Vgs= -10V, Id=4 A : max 0.4 Ohm Forward Transconductance at Vgs=-10V, Id=4A: min 2 mho Capacitances at Vds=25V, Vgs= 0, f=1MHz : Input : max 1500pF Output : max 700pF Reverse : max 300pF Times at Vdd=50V, Id=4A, Vgs=-10V, Rg=Rgs=50 Ohm: Turn On Delay: max 60 ns Rise: max 150 ns Turn Off Delay: max 275 ns Fall: max 175 ns Antiparallel Diode forward Voltage: max 1.4V at 4A Reverse Recovery Time at 4A, 100A/us: typ. 200ns ______________________________________
Alle Angaben ohne Garantie. Fehler beim Abschreiben sind möglich. Wenn Sie seltsame Werte entdecken, scheuen Sie sich nicht, per email nachzufragen!
______________________________________ Der RTD 0406 ist ein Reverse Blocking Triode Thyristor (SCR), seinerzeit von Transitron hergestellt. Repetitive Peak Off-State Voltage Vdrm = 60V Repetitive Peak Reverse Voltage Vrrm = 60V Absolute Maximum Ratings at 80 grdC.: Average On-State Current = 1A RMS On-State Current = 1,6 A Peak one Cycle Surge Current(60Hz): 15 A Peak Reverse Gate Voltage = 5V Peak- and Average- Gate Power = 500mW Temp.: -65 to 125 grdC. Characteristics: Max On-State Voltage at It=1A: max 1.4 V Gate Trigger Current: max 100uA Gate Trigger Voltage: max 0.8V Holding Current at Rgk=1kOhm: max 5 mA Mit Thyristoren kenne ich mich leider nicht aus. Es scheint ein empfindlicher Typ zu sein, der keinen Widerstand zwischen Gate und Kathode eingebaut hat. Hinweis: Für einige Werte wird zum Messen ein externer 1 kOhm- Widerstand gefordert. Die meisten heute erhältlichen Typen sind am Eingang niederohmig, damit sie nicht durch Störimpulse oder die eigenen Schaltflanken so leicht gezündet werden können. Wenn in der Schaltung ein Widerstand von einigen 100 Ohm parallel zum Triggereingang liegt, kann man nach Entfernen des Widerstands auch modernere Typen mit internem Widerstand ähnlicher Größe verwenden. ______________________________________
Alle Angaben ohne Garantie. Fehler beim Abschreiben sind möglich. Wenn Sie seltsame Werte entdecken, scheuen Sie sich nicht, per email nachzufragen!
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!