NE02107B RF transistor for common base amplifiers
from the NEC RF Semiconductors databook 1989
B
|
C-- O --E ( 45 grd cutted)
|
B
Attention: The NE02107 without B - suffix
has the normal common emitter case
Absolute Maximum Ratings :
Vcbo = 25 V
Vceo = 12 V
Vebo = 3 V
Ic = 70 mA
Pd at Tc=25grdC. = 700 mW
at Ta=25grdC. = 350 mW
Tj = Tstg = -65 to 200 grdC
Specifications :
Forward Current Gain at Vce=10V, Ic=20mA :
min 20, typ 70, max 250
Collector to base capacitance at Vcb=10V, Ie=0, f=1MHz :
typ 0.6 pF, max 1 pF
( as for all other members of this family having common emitter)
Gain Bandwidth Product at Vce=10V, Ic=20mA : typ 4.5 GHz
Insertion Power Gain at Vce=10V, Ic=20mA,
at 0.5GHz : typ 18.5 db
at 1 GHz : typ 13 dB
at 2 GHz : typ 6.5 dB
Noise Figure at Vce=10V, Ic=3mA, f=500MHz : 1.5 dB
at Ic=5mA, f=2GHz : typ 2.7 dB, max 4.5 dB
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ NE243288 NPN medium power oszillator transistor from the NEC databook MICROWAVE AND RF 1989/1990. Absolute Maximum Ratings at 25 grdC.: Vcbo = 25 V Vcer (Rbe=300 Ohm) = 25 V Vceo = 16 V Vebo = 1.5 V Ic = 220 mA until Vce=7V, derating to 70 mA at 16V Total Power Dissipation: max 5.5 W T junction = 200 grdC. T stg = -65 to 200 grdC. Thermal Resistance Junction to Case : max 30 grdC./W Characteristics at 25 grdC.: Forward Current Gain at Vce=8V, Ic=100mA : min 20, max 200 Output Capacitance at Vcb=10V, Ie=0: typ 0.95 pF, max 1.5 pF Oszillator Power Output at Vce=12V, Ic=120mA, f=7.5 GHz: typ 320 mW Insertion Power Gain at Vcc=8V, Ic=100mA, f=1 GHz : min 4 dB NE243288 common COLLECTOR scattering parameters: S11 is based to collector, S22 is emitter to collector 2GHz: S11 : 0.97 -90 S21 : 1.54 -56 S12 : 0.45 25 S22 : 0.69 132 3GHz: S11 : 0.96 -120 S21 : 1.31 -77 S12 : 0.57 2 S22 : 0.55 116 4GHz: S11 : 0.96 -146 S21 : 1.11 -95 S12 : 0.64 -22 S22 : 0.42 104 5GHz: S11 : 0.95 -169 S21 : 0.95 -112 S12 : 0.67 -42 S22 : 0.33 96 6GHz: S11 : 0.94 171 S21 : 0.81 -130 S12 : 0.68 -62 S22 : 0.25 96 7GHz: S11 : 0.91 151 S21 : 0.7 -145 S12 : 0.66 -79 S22 : 0.24 96 8GHz: S11 : 0.89 134 S21 : 0.61 -164 S12 : 0.65 -100 S22 : 0.23 97 9GHz: S11 : 0.92 112 S21 : 0.54 179 S12 : 0.64 -120 S22 : 0.3 87 10GHz: S11 : 0.97 87 S21 : 0.49 157 S12 : 0.63 -142 S22 : 0.36 71 ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ I have a NEC datasheet NE416 SERIES in the databook 1989/1990. It contains the following types in different packages: NE41603 = 2SC1949 NE41607 NE41612 = 2SC2025 (TO72) NE41615 = 2SC1426 (TO33) NE41620 = 2SC1255, 2SC1592 (M3-Stud) NE41632 = 2SC2407, 2SC2408 (TO92) NE41635 (Micro-X) The NE41600 is the Chip, it was not available without package. Absolute Maximum Ratings: Vcbo = 35 V Vceo = 18 V Vebo = 3 V Ic = 100 mA Tj = 200 grdC. Tstg = -65 to 200 grdC. Total Power Dissipation: from 290 mW for the Micro X Package to 3.5 W for the Stud- Package Thermal Resistance Junction to Case : 50 grdC./W ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ NE56803 NPN Medium Power Microwave Transistor (From a datasheet in the databook NEC 1989 ) This Chip is available in other case : 2SC2339 (Stud) and 2SC2340 (Flange). The NE56803 Case is for sourface soldering. Absolute Maximum Ratings : Vcbo = 25 V Vceo = 15 V Vebo = 1.5 V Ic = 150 mA Pd = 1.5 W Tj = 200 grdC. Tstg = -65 to 200 grdC. Thermal Resistance Junction to Case : max 60 grdC./W Characteristics : Forward Current Gain at Vce=10V, Ic=80 mA : min 20, typ 60, max 160 Output Capacitance at Vcb=10V, Ie=0, f=1MHz : typ 0.55 pF, max 0.8 pF f s (frequency where |S21|^2 = 0 dB ) : min 4 GHz, typ 4.2 GHz Maximum Available Gain at Vce=10V, Ic=80mA, f=2GHz : min 12 dB, typ 14 dB Output Power at 1dB Compression, Vce=10V, Ic=80mA, f=2GHz : typ 310 mW ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ NE57835 NPN Silicon Microwave Transistor From a datasheet in the NEC databook 1989. Micro-X Case (NEC- Outline 35, 2x Emitter) The EIAJ registered number is 2SC2150. Absolute Maximum Ratings: Vcbo = 25 V Vceo = 11 V Vebo = 3 V Ic = 30 mA Pd = 250 mW Tj = Tstg = -65 to 200 grdC. Thermal Resistance Junction to Case : 140grdC./W Characteristics at 25 grdC. : Forward Current Gain at Vce=8V, Ic=10mA : min 30, typ 100, max 200 Coll. to Base Capacit. at Vcb=8V, Ie=0, f=1MHz : typ 0.3 pF, max 0.6 pF Gain Bandwidth Prod. at Vce=8V, Ic=10mA : min 4 GHz, typ 6 GHz Insertion Power Gain at Vce=8V, Ic=10mA, f=1GHz : typ 15 dB at f=2GHz : typ 9 dB at f=4GHz : min 1.5dB, typ 2.7 dB Minimum Noise Figure at Vce=8V, Ic=3mA, f=2GHz : typ 2.4 dB at f=3GHz : typ 3.4 dB at f=4GHz : typ 4.3 dB, max 5.5 dB Maximum Available Gain at Vce=8V, Ic=10mA, f=2GHz : typ 12 dB at f=3GHz : typ 9 dB at f=4GHz : typ 6.5 dB ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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I have the NE70000 datasheet in the NEC book 1989-1990.
The NE70000 is the Chip of the 2SK353 = NE70083
Low Noise Ku-K Band GaAs MESFET
Absolute maximum ratings :
Vds = 5 V
Vgs = -6 V
Ids = 100 mA
Ptot = 400 mW at Ta=100 grdC, mounted on a copper heatsink
Tch = 175 grdC.
Tstg = -65 to 175 grdC.
Thermal Resistance Channel to case : max 190 grdC./W
Characteristics at 25 grdC.:
Idss at Vds=3V, Vgs=0 : min 20 mA, typ 50 mA, max 120 mA
Pinch off Voltage at Vds=3V, Ids = 0.1 mA :
min -0.5V, typ -1.1 V, max -6 V
Transconductance at Vds=3V, Ids=10mA :
min 20 mS, typ 45 mS, max 100 mS
Gate Source Leakage Current at Vgs=-5V : typ 1 uA, max 10 uA
Performance Specifications at 25 grdC.:
Maximum Frequency of Oszillation at Vds=3V, Ids=30mA : typ 80 GHz
Maximum Available Gain at Vds=3V, Id=30 mA :
at 8 GHz : typ 16 dB
at 12 GHz : typ 11 dB
at 18 GHz : typ 8 dB
Optimum Noise Figure at Vds=3V, Ids=10mA, and associated Gain:
at 4 GHz : typ 0.7 dB, max 0.9 dB - Gain typ 14 dB
at 8 GHz : typ 1.2 dB - Gain typ 11 dB
at 12 GHz: typ 1.9 dB, max 2.4 dB - Gain typ 9 dB
(determined by packaging)
Output Power at 1 dB Compression Point at Vds=3V,
Ids=20mA, f=12 GHz : typ 15 dBm
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ NE71083 Low Noise Ku-K Band GaAs MESFET manufactured 1988 by NEC. It has also the japanese Typenumber 2SK406. The triangle-file is the Gate, opposite is the Drain, the 2 other big files are Source. Absolute Maximum Ratings: Vds = 5V Vgs = -6V Ids = 120mA RF input Power = 40mW Ptot = max 270 mW Temp = -65 to 175 grdC Thermal Resistance Channel to case = max 450 grdC/W Characteristics at 25 grdC: Idss at Vds=3V, Vgs=0V : min 20mA, typ 40mA, max 120mA; Pinch Off Voltage at Vds=3V, Ids=0.1mA: min -0.5V, typ -1.1V, max -3.5V; Transconductance at Vds=3V, Ids=10mA : min 20 mS, typ 50mS, max 100mS (S = 1/Ohm) Maximum Frequency of Oszillation at Vds=3V,Ids=30mA: typ 100 GHz; Maximum Available Gain at Vds=3V, Id=30mA: at 8 GHz: typ 15 dB, at 12 GHz: typ 12 dB, at 18 GHz : typ 8.5 dB. Optimum Noise Figure at Vds=3V,Id=30mA,f=12GHz: typ 1.6 dB, max 1.8 dB, Associated Gain at the same conditions: min 8 dB, typ 9,5dB. Output Power at 1dB Compression Point at the same cond.: typ 15 dBm. ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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NE72084 GaAsFET
From the NEC databook 1989
= 2SK571
This Chip is also available in a bigger
case as 2SK354A = NE72089A
Mini X case : The cutted lead is Gate, opposite is Drain,
the 2 others are Source.
Absolute Maximum Ratings :
Vds = 5 V
Vgdo = - 6 V
Vgso = - 6 V
Igf = 4 mA
Ids = 150 mA
Ptot = 300 mW
T channel = 175 grdC.
Thermal Resistance Channel to Ambient : max 400 grdC./W
Characteristics :
Idss at Vds=3V, Vgs=0 : min 30 mA, typ 60 mA, max 150 mA
Pinch off Voltage at Vds=3V, Ids=0.1 mA :
min -0.8 V, typ -2 V, max -4 V
Transconductance at Vds=3V, Ids=10 mA :
min 20 mS, typ 40 mS, max 60 mS
Maximum Frequency of Oszillation at Vds=3V, Ids=30mA : typ 60 GHz
Maximum Available Gain at Vds=3V, Ids=30mA :
at 2 GHz : typ 17.5 dB
at 4 GHz : typ 15 dB
at 8 GHz : typ 12 dB
at 12 GHz : typ 8 dB
Optimum Noise Figure and Associated Gain at Vds=3V, Ids=10mA
( typ Ids = 15% Idss ) :
at 2 GHz : typ 0.6 dB typ 15 dB
at 4 GHz : typ 0.8 dB, max 1.4 dB typ 12 dB
at 8 GHz : typ 2 dB typ 8.5 dB
Output Power at 1 dB Compression Point at Vds=4V, Ids=30mA,
f=4GHz ( typ Ids = 50% Idss ) : typ 15 dBm
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ NE98241 NPN High Speed Switching Transistor, Dual Chip Version of the NE98208 and NE98203= 2SC1660 EIAJ Registered Part Number : 2SC1662 (Grd C) Pins : C2 B2 __|__|___ | | | |__ E | |__ 1) |_________| | | C1 B1 1) the small lead is only used in manufacturing and has no el.significance Absolute Maximum Ratings at 25 grdC.: Vcbo = 20 V Vceo = 8 V Vebo = 3 V Ic = 80 mA Ic pulsed <5us, 10% : 200mA Ptot per unit = 350 mW Ptot = 400 mW ? from a diagram: 500mW until 25 grdC. ? Tj = Tstg = -65 to 200 grdC. Thermal Resistance Junction to Case : max 90 grdC./W Characteristics at 25 grdC.: Icbo at Vcb=6V, Ie=0 : max 0.1 uA Iebo at Veb=2V, Ic=0 : max 0.1 uA Forward Current Gain at Vce=5V, Ic=30mA : min 30, typ 100, max 300 hFE1/hfe2 (Delta) : min 0.6 Vbe at Ic=30mA, Vce=5V : max 0.9 V Delta Vbe : max 20 mV Collector to Base Vap. at Vcb=6V, Ie=0, f=1MHz : typ 0.6 pF, max 1 pF Specifications at 25 grdC.: Gain Bandwidth Product at Vce=6V, Ic=30mA : min 6 GHz, typ 7 GHz Insertion Power Gain at Vce=6V, Ic=30mA, f=3GHz : for the single type only : typ 4 dB Maximum Available Gain at the same conds.: typ 6 dB Oszillator Power Output at Vce=6V, Ic=20mA, f=6GHz: for the single type only : typ 20 mW ) ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ NPD5564 Dual JFET DIL-version of the 2N5564 manufactured 1982 by National Semiconductor. Pins: 1 : S1 2 : D1 3 : not connected 4 : G1 5 : S2 6 : D2 7 : not connected 8 : G2 From the Process Datasheet: Gate Source Breakdown Voltage at Vds=0V, Ig=-1uA: min -40 V, typ -55 V Idss at Vds=15V,Vgs=0: min 5 mA, typ 15 mA, max 30 mA Forward Transconductance at Vdg=15V, Id=2mA : min 7.5 mmhos, typ 9 mmhos at Vgs=0 : min 9, typ 18, max 30 mmhos Pinch off voltage at Vds=15V, Id=1nA : min -0.5 V, typ -1.8 V, max -3 V ON Resistance: at Vds=0.1V, Vgs=0: min 35, typ 70, max 120 Ohm Noise Voltage at Vdg=15V, Id=2mA, f=100Hz : typ 4.5, max 10 nV/root(Hz) Input Capacit.: typ 10pF, max 12 pF Feedback Capacit.: typ 2.5, max 3 pF Differential Voltage |Vgs1-Vgs2| for Id=2mA : typ 8mV, max 25 mV __________________________________ In the selection table I find en=50nV/root(Hz) at 10Hz The National Semiconductor databook 1982 has selection tables and datasheeds for Processes. The Process 96 N-Channel Dual JFET is used for 2N5564, 2N5565 and 2N5566 ( and NPD...) I don't find any current noise specification. Perhaps because of the wide area of the specified Gate Current: Igss at Vgs=-20V, Vds=0 : typ -8 pA, max -100 pA ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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Die NSD- Typen sind von National Semiconductor. Vielleicht war
das Resteverwertung aus der Produktion militärischer 2N-
Transistoren. Ich habe ein Datenbuch, wo man sich die Daten
aus verschiedenen Seiten zusammensuchen muß.
In diesem Fall ist der Ursprungstyp
für NSD106 der 2N6552/2N6553
für NSD206 der 2N6555/2N6556
NSD106 NPN medium power transistor
Case TO202, EBC ! 2)
Maximum Ratings:
Vcbo = 140 V
Vceo = 100 V
Vebo = 7 V
Ic = ?? ( 1 A )
Pd at Tc=25 grdC.: 10 W
at Ta=25 grdC.: 2 W
Tj = 150 grdC.
Thermal Resistance Junction to Case : max 12.5 grdC./W
Characteristics:
DC Current Gain at Vce=5V, Ic=10 mA : min 20
at Ic=100mA : min 50, max 150
at Ic=500mA : min 25
Vce(sat) at Ic=100mA : max 0.2 V
at Ic=500mA : max 0.5 V
Vbe(sat) at Ic=100mA : max 0.9 V
at Ic=500mA : max 1.2 V
Cob at Vce=10V: max 50 pF 1)
Transit Frequency at Ic=50mA : min 60 MHz
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NSD206 PNP medium power transistor
Case TO202, EBC ! 2)
Maximum Ratings:
Vcbo = 140 V
Vceo = 100 V
Vebo = 7 V
Ic = ?? ( 1 A )
Pd at Tc=25 grdC.: 10 W
at Ta=25 grdC.: 2 W
Tj = 150 grdC.
Thermal Resistance Junction to Case : max 12.5 grdC./W
Characteristics:
DC Current Gain at Vce=5V, Ic=10 mA : min 20
at Ic=100mA : min 50, max 150
at Ic=500mA : min 25
Vce(sat) at Ic=100mA : max 0.2 V
at Ic=500mA : max 0.5 V
Vbe(sat) at Ic=100mA : max 0.9 V
at Ic=500mA : max 1.2 V
Cob at Vce=10V: max 30 pF 1)
Transit Frequency at Ic=50mA : min 60 MHz
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1) halte ich für einen Druckfehler, denn der 2N6555 hat nur max 18 pF
2) Achtung! unübliche Anschlußfolge:
Emitter - Basis - Collector, wie bei TO5.
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______________________________________ NSD459 NPN Medium Power Transistor in TO202 case National Semiconductor Derselbe Chip im TO 237- Gehäuse heißt 2N6735 mit EBC- Pinning, oder 2N6713 und 2N6719 mit der üblichen ECB Anschlußfolge. Maximum Ratings : Vcbo = 300 V Vceo = 300 V Vebo = 5 V Ptot at Tc=25grdC.: 10 W at Ambient=25grdC.: 2 W Thermal Resistance Junction to Case : max 12,5 grdC./W Characteristics : Icbo at Vcb=250V : max 50 nA h FE at Ic=30mA, Vce=10V : min 25 Vce(sat) at Ic=30mA , Ib=3mA : max 1 V Cib at Veb=0.5 V : max 70 pF Ccb at Vcb=20V : max 3.5 pF Dieser Typ scheint eine billige Resteverwertung der oben genannten 2N- Typen zu sein. Bei denen sind einige Daten besser, und noch zusätzliche Daten angegeben, z.B.: Transitfrequenz bei Ic=10mA : min 40 MHz, max 200 MHz. So ähnlich dürfte also auch der NSD459 liegen. National Semiconductor hatte im 1982er Datenbuch nur Tabellen und Chipdaten. Beim Chipprozess gibt es auch einige Diagramme, aber man weiß nie so richtig, was für die jeweiligen Einzeltypen zutrifft, weil sie ja verschiedene Selektionen darstellen. ______________________________________
Alle Angaben ohne Garantie. Fehler beim Abschreiben sind möglich. Wenn Sie seltsame Werte entdecken, scheuen Sie sich nicht, per email nachzufragen!
______________________________________ ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!