M103 P-Channel Enhancement MOSFET
SILICONIX
Normally-off MOSFET for analog and digital switching
TO 72 case:
Pins:
1 : Drain
2 : Gate
3 : Case,Base
4 : Source
bottom view, clockwise, nose between 1 and 4
Maximum Ratings:
Vds = - 30 V
Vgs = - 30 V
Vgd = - 30 V
Id = -50 mA
Gate Zener Clamp protection: Ig = 0,1 mA
Total Device Dissipation = 225 mW
derate 2.25 mW/grdC. to 125 grdC.
Op. Junction Temp. : -55 to 125 grdC.
Storage Temp. : -65 to 150 grdC.
Characteristics:
Gate Threshold Voltage at Id=-10uA, Vgs=Vds, Vbs=0 :
min -2.5 V, max -5.5 V
Source Cutoff Current at Vsd=-20V, Vgd=Vbd=0 : max -0.2 nA
Drain Cutoff Current at Vds=-20V, Vgs=Vbs=0 : max -0.2 nA
Rds(on) at Vgs=-15V, Id=-100uA, Vbs=0 : max 130 Ohm
Capacitances at Vgb=0, Vsb=Vdb, f=1MHz :
Gate Source at Vdb=0 : max 4 pF
Gate Drain at Vdb=0 : max 4 pF
Source Body at Vdb=-5V : max 5 pF
Drain Body at Vdb=-5V : max 4 pF
Drain Source at Vdb=-5V: max 0.5 pF
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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M5911 Dual JFET
Bottom View, clockwise, beginning with the nose:
Source 1
Drain 1
Gate 1
Case
Source 2
Drain 2
Gate 2
Absolute Maximum Ratings at 25 grdC.:
Vdg = 25 V
Vsg = 25 V
Ig = 50 mA
Pd for 1 FET : 367 mW
P tot = 500 mW
Junction Temp.: -55 to 150 grdC.
Storage Temp.: -65 to 200 grdC.
Characteristics:
Idss at Vds=10V, Vgs=0 : min 7 mA, typ 15 mA, max 40 mA
Vgs at Vdg=10V, Id=5mA : min -0.3V, typ -1.5V, max -4 V
Dynamic Common Source at Vdg=10V, Id = 5 mA :
Forward Transconductance at 1 kHz or 100MHz :
min 5 mS, typ 6 mS, max 10 mS
Output Conductance at 1 kHz : typ 20 uS, max 100 uS
at 100 MHz : typ 30 uS, max 150 uS
Input Capacitance at 1 MHz : typ 3.5 pF, max 5 pF
Reverse Transfer Capacitance at 1 MHz : typ 1 pF, max 1.2 pF
Equivalent Input Noise Voltage at 10 kHz :
typ 4, max 20 nV/squareroot(Hz)
Noise Figure at 10 kHz, Rg=100kOhm : typ 0.1 dB, max 1 dB
Matching at Vdg=10V, Id=5 mA :
Differential Gate Source Voltage : typ 7 mV, max 10 mV
Idss- Ratio : min 0.95, typ 0.98
Transconductance Ratio : min 0.95, max 0.98
Common Mode Rejection Ratio: typ 90 dB
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MA40417 GaAs Schottky Mixer Diode, W- Band From a family-datasheet for the full 40400 series: Beam Lead case Maximum Ratings: Power Dissipation at 25 grdC. : 75 mW Derate Lineaity to 0 at 150 grdC. Top = Tstg = -65 to 150 grdC. Specifications at 25 grdC.: Reverse Voltage at Ir=10uA : min 5 V Series Resistance at If=10mA, Rs=Rt-Rj : min 4 Ohm, max 10 Ohm (Rt = measured dynamic res., Rj = 26/If = junction resistance) Junction Capacitance at Vr=0, f=1MHz : min 0.03 pF, max 0.055 pF Typical If Impedance: min 250 Ohm, max 500 Ohm ( no declaration in the datasheet, If = ??? ) Nominal Noise Figure: typ 7 dB (The footnote in this field is obscure, it is for the 40418 only) The datasheet has a diagramm If Impedance vs Local Oscillator Drive with Rl=10 Ohm: 800...1000 Ohm at 4 dBm 150... 220 Ohm at 8 dBm 70... 95 Ohm at 13dBm Noise Figure vs Local Oscillator Power: 7 dB at 2.2 (I think dBm also) 5.7 dB at 6.5 ( min of valley) 7 dB at 13 ______________________________________
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______________________________________ MA41505 Point Contact Mixer Diode I possess a MICROVAVE ASSOCIATES INC datasheet. On the same datasheet is the 1N832, differences only for Case Dimensions and Z IF Rage. Maximum Ratings: Burnout Rating for a pulse length of 10us at 100pps : 5.0 Watts ( on an other place I find 5W / 10 nanosec !!) Incident CW RF Power: max 500 mW Temp.: Top = Tstg = -65 to 150 grdC. Characteristics: Test Frequ.: 9.375 GHz Test at IF : 30 MHz, NF IF = 1.5dB, P LO = 1 mW, R L = 100 Ohm: Max Noise Figure : 9.5 dB (The best is MA41509 having 6 dB) Typ. Conversion Loss : 7 dB Z IF Range : 200 - 400 Ohm That's all. But perhaps you can find the 1N832 in the Internet. ______________________________________
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______________________________________ MA42001-509 = 2N6665-509 NPN transistor From the MACOM databook 1995: (TO72) Bottom View, beginning with the nose, clockwise: Emitter, Base, Collector, Case. Maximum Ratings at 25 grdC.: Vcbo = 20V Vce0 = 15V V3b0 = 2.5 V Ic = 125 mA Pd = 450 mW Junction Operating Temp.: -65 to 150 grdC. Specifications at Vce=10V, f=60 MHz: Noise Figure at 5 mA: max 1 dB Unilateral Gain: max 28 dB Characteristics: Nominal f T = 2.5 GHz Frequency Range 10 to 750MHz ______________________________________
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______________________________________ MA42051... NPN transistor From the MACOM databook 1995: Type- Suffix for the case style: Case Style 509 = (TO72) Emitter-Base-Collector-Case (Bottom View, beginning with the nose, clockwise) Case Style 510 = X-case Case Style 511 = X-Stripline : cutted = Collector, opposite = Base, others = Emitter. Maximum Ratings: Vcbo = 20 V Vceo = 15 V Vebo = 2.5 V Ic = 40 mA Junction Operating Temp.: -65 to 150 grdC. Storage Temp.: -65 to 200 grdC. Power Dissipation = 300mW ( case 510: 450 mW ) Specifications at 25 grdC.: Noise Figure at 3 mA, 450MHz : max 2.2 dB Unilateral Gain at Vce=1V, Ic=3mA, f=450 MHz : max 18 dB Nominal Current Transfer Ratio : 75 Transit Frequ. = typ 1.8 GHz Useful Frequency Range : 10 to 600 MHz, for oszillators 100 to 1000 MHz ___________________________________________________ MA42111 ... NPN transistor From the MACOM databook 1995: Type- Suffix for the case style: Case Style 509 = (TO72) Emitter-Base-Collector-Case (Bottom View, beginning with the nose, clockwise) Case Style 510 = X-case Case Style 511 = X-Stripline : cutted = Collector, opposite = Base, others = Emitter. Maximum Ratings: Vcbo = 20 V Vceo = 15 V Vebo = 2.5 V Ic = 125 mA Junction Operating Temp.: -65 to 150 grdC. Storage Temp.: -65 to 200 grdC. Power Dissipation = 450mW (1200mW bei Gehäuse 510, 750mW bei 511, siehe unten) Specifications at 25 grdC.: Noise Figure at Vce=10V, Ic=5 mA, f=450MHz : max 1.5 dB Unilateral Gain at f=450 MHz : max 14 dB (17 dB bei Gehäuse 510, 19 dB bei 511) Nominal Gain at Optimal Noise Figure: 13 dB ( 15 dB bei 510 und 511) Forward Current Gain at Vce=15V,Ic=5mA : min 20, typ 120, max 300 Collector Base Capacitance at Vcb=5V,f=1MHz : typ 1 pF, max 1.2 pF Transit Frequ. = typ 5.5 GHz Useful Frequency Range : 100 to 1500 MHz, for oszillators 100 to 4000 MHz ______________________________________
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______________________________________ MA45240 Abrupt Tuning Varactor from the MACOM databook 1995: Maximum Ratings : Vr = V breakdown = 30 V Power Dissipation = 200 mW Top = -65 to 150 grdC. Tstg = -65 to 200 grdC. Characteristics at 25 grdC.: Reverse Leakage Current at Vr=24V : max 20 nA at Vr=30V : max 10 uA Total Capacitance at Vr=4V, f=1MHz : typ 10 pF Minimum Cap. Ratio C0/C30 = 4 Typical Q at Vr=4V, f=50MHz : 2500 Suggested Frequency Range : 1 ... 2 GHz ______________________________________
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______________________________________ For The MA49106... Family of GaAs Gunn Diodes I have a 6-page family- datasheet in the databook MACOM 1995. There are a lot of types, but for each type the datasheet has only little datas. MA49106: CW Gunn Diode for fixed Frequency! Operating Frequency : 8 to 12.4 GHz 1) CW Output Power into a critically coupled load : min 50 mW Operating Voltage : 8 to 12 V Operating Current : 300 to 450 mA 2) Maximum thermal Resistance : 35 grdC./W Max Heatsink Temperature : -30 to 70 grdC. MA49109: CW Gunn Diode for fixed Frequency! Operating Frequency : 8 to 12.4 GHz 1) CW Output Power into a critically coupled load : min 250 mW Operating Voltage : 8 to 12 V Operating Current : 750 to 1050 mA 2) Maximum thermal Resistance : 15 grdC./W Max Heatsink Temperature : -30 to 70 grdC. MA49117: CW Gunn Diode for use in tuning oscillators Operating Frequency : 8 to 12.4 GHz CW Output Power into a critically coupled load : min 100 mW Operating Voltage : nominal 8 V, max 12 V Operating Current : 450 to 500 mA 2) Maximum thermal Resistance : -- Max Heatsink Temperature : -30 to 70 grdC. 1) The customer MUST species the desired operating frequency within the indicated range. 2) Max. Threshold Current is approximately 1.3 times Iop max. ______________________________________
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______________________________________ MA49121 GaAs Gunn Diode databook MACOM 1995. Fixed Frequency CW Gunn Diode Operating Frequency : 12.4 to 18 GHz 1) CW Output Power into a critically coupled load : min 25 mW Operating Voltage : 6 to 10 mA Operating Current : 200 to 300 mA Max. Threshold Current is approximately 1.3 times Iop max. Maximum thermal Resistance : 45 grdC./W Max Heatsink Temperature : -30 to 70 grdC. 1) The customer MUST species the desired operating frequency within the indicated range. ______________________________________
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______________________________________ MA49628 Commercial Fixed Frequency CW Gunn Diode From the MACOM databook 1995. The heat sink is the anode. Specifications at 25 grdC.: Maximum Operating Current : 200 mA Maximum Threshold Current : 260 mA Nominal Operating Voltage : 5 V Frequency : min 18 GHz, max 26 GHz The customer MUST species the desired operating frequency within the range. Min CW Output : 10 mW measured into a critically coupled load at the specified single frequency, typical bandwidth is +/- 5 % ______________________________________
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______________________________________ MA4P232 PIN Diode Glasdiode Durchmesser max 2.7mm x 6.1 mm Verlustleistung bei 25 grdC.: 1 W Derating auf 0 bei 150 grdC. Top = -65 ... 150 grdC. Tstg = -65 ... 175 grdC. Sperrstrom bei Ur=500V : max 10 uA bei Ur=400V : max 1 uA Durchlasswiderstand bei If=100mA, f=100MHz : max 0.6 Ohm Sperrkapazitätbei Ur=100V, f=100MHz : max 1.5 pF Minoritätsträgerlebensdauer Tl 90% bei If=10mA, Ir=6mA : min 1.5 us Damaliger Ersatztyp: SDI DP-100858-015 _________________________ MA4P487 PIN Diode Glasdiode Durchmesser max 2.7mm x 6.1 mm Verlustleistung bei 25 grdC.: 1 W Derating auf 0 bei 150 grdC. Top = -65 ... 150 grdC. Tstg = -65 ... 175 grdC. Sperrstrom bei Ur=500V : max 10 uA bei Ur=400V : max 1 uA Durchlasswiderstand bei If=100mA, f=100MHz : max 0.35 Ohm Sperrkapazitätbei Ur=100V, f=100MHz : max 1.5 pF Minoritätsträgerlebensdauer Tl 90% bei If=10mA, Ir=6mA : min 1.5 us Damaliger Ersatztyp: SDI DP-100798-015 ____________________________ Bei beiden PIN- Dioden steht noch die Anmerkung: Übrige Daten wie Typ MA47266. Den habe ich im MACOM Datenbuch von 1995, allerdings finde ich da auch nicht mehr elektrische Daten. Er hat nur 200V und eine Trägerlebensdauer von typ 3 us. Ein Diagramm zeigt von 400 Ohm bei 10uA bis 0.7 Ohm bei 10mA eine gerade Linie und dann abgeflacht bis 0.25 Ohm bei 200mA. ______________________________________
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______________________________________ MA4P800 Glass Encapsulated Beam-Lead PIN Diode used for 10 GHz. MACOM Maximum Ratings : Voltage : 100 V Power Dissipation at 25 grdC.: 250 mW Operating and Storage Temp : -65 to 175 grdC. Beam Srength : 6 grams Specifications at 25 grdC.: Maximum Capacitance at 10V, 1 MHz : 0.025 pF Maximum R S at 50mA, 500MHz : 3.5 Ohm Reverse Voltage at 10 uA : min 100 V Nominal Carrier Lifetime at 10 mA : 100 ns Nominal Reverse Recovery Time at If = 20 mA, Ir=200 mA : 10 ns From the Diagram Series Resistance vs. Forward Bias Current, at 500MHz: 2000 Ohm at 1 uA 70 Ohm at 100 uA 15 Ohm at 1 mA 5 Ohm at 10 mA 2.5 Ohm at 100 mA ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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MA4PK3001/3002 High Voltage PIN- Diode
for HF, Multi -Kilowatt Switches, Antenna Couplers,
Bypass Switches, MRI Switches.
Cathode = Stud
Anode = Solder Lug (3001) / no solder lug (3002)
Maximum Ratings
Instantaneous Reverse Voltage: max 3000V (at 10uA)
Forward Current (RF and DC): max 25 A
Power Dissip. at Case Temp.=25grdC: 75 W
Operating and Storage Temp.: -65 to 175 grdC.
Thermal Resistance Junction to Stud: max 2 grdC/W
Specifications at 25 grdC:
Series Resistance at f=4MHz,I=0.5A: max 0.25 Ohm
at f=1 to 100MHz, I=0.5A: typ 0.15 Ohm
Total Capacitance at f=1MHz, V=100V : max 4 pF
Reverse Bias at f=10MHz, V=100V: max 1 uS
Carrier Lifetime at I F = 10mA : min 20 usec.
I-Region Width = 325um (nom.)
Forward Voltage at I F = 1 A : max 1.2 V
Characteristics, selected from diagrams:
Series Resistance at f=100MHz, I=10mA:
typ 2 Ohm, at I=200mA: typ 0.2Ohm
Capacitance at V=0V, f=1MHz:
typ 10 pF, at f=10MHz: typ 4pF (As above)
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ For the MC678 I have only a brief datasheet: MICRO DIODES , Micro Semiconductor Corporation, 1975. Case hermetically sealed .04 max. diameter x .85 max. Color Code on cathode lead. MC678 (MSC-Type, special case ) = (equivalent) 1N678 standard case Saturation Voltage at 100uA: 230V Forward Current at 1V: 200mA Maximum Reverse Current at 200V, at 25 grdC.: max 1 uA at 150grdC.: max 100 uA Max. Average Rectified Current at 25 grdC.: 200mA Max Power Dissipation at 25 grdC.: 300 mW Operating Temp. Range: -65 to 175 grdC. ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MCL1304 Field-effect current limiting diode: MOTOROLA 1974 Nominal Pinch-Off Current at Vt=25V : 4 mA +/- 0.6 mA Limiter Impedance at Vt=25V : min 250 kOhm Knee Impedance at V=6V : min 25 kOhm Limiting Voltage at I= 80% : max 2.5 V Peak Operating Voltage : 75 V Junction and Storage Temp: -65 to 200 grdC. All types of Current Limiting Diodes ( The only other manufacturer I know, was SILICONIX ) were very seldom ! I propose to select a small signal FET having an Idss = 4 mA and the needed maximal voltage. Gate connected with Source. ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MGF1302 GaAsFETs (N-Channel Schottky Gate) Mitsubishi Small and cutted: Gate, opposite: Drain, 2x wide : Source. Absolute Maximum Ratings: Vdgo = 6V Vsg0 = 6V Id = 100mA Pt = 360mW Tch = 175 grdC Thermal resistance channel to ambient: 416 grdC/W Characteristics: Idss = min 30mA, typ 60mA, max 100mA Vgs off at Vds=3V, Id=100uA: min -0.3V, max -3.5V Transconductance at Vds=3V, Id=10mA : min 25 mS, typ 45 mS Minimum Noise Figure at Vds=3V, Id=10mA, f= 4GHz : max 1.4 dB, Associated Gain: min 11 dB At 12GHz NFmin = 2.76 dB ____________________________________ MGF1802 GaAsFETs (N-Channel Schottky Gate) Mitsubishi Small and cutted : Gate, opposite : Drain, Flange with holes 1,6mm : Source. Absolute Maximum Ratings: Vdgo = 8V Vsg0 = 8V Id = 250mA Reverse Gate Current max -0.6 mA Forward Gate Current max 1.5 mA Pt = 1800mW Tch = 175 grdC Therm. Widerst.(ch-a) 83 grdC/W Characteristics: Idss = min 150mA, typ 200mA, max 250mA Vgs off at Vds=3V, Id=1mA: min -1.5V, max -4.5V Transconductance at Vds=3V, Id=100mA : min 70 mS, typ 90 mS At Vds=6V, Id=100mA, f=12GHz: Ouput Power at 1dB gain compression: min 130mW, typ 150mW Linear Power Gain: min 6dB, typ 6 dB Power added efficiency (?): typ 20% ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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MGF1404 GaAsFET, N Channel Schottky Barrier Gate
Small cutted pin: Gate.
opposite: Drain.
2 x wide pins: Source.
Absolute Maximum Ratings:
Vdgo = 6V
Vsg0 = 6V
Id = 80mA
Pt = 240mW
Tch = 175 grdC
Thermal Resistance (ch-a) 625 grdC/W
Characteristics:
Idss at Vds=3V : min 15 mA, typ 35 mA, max 80 mA
Vgs off at Vds=3V, Id=100uA: min -0.3V, max -3.5V
Transconductance at Vds=3V, Id=10mA : min 20 mS, typ 40 mS
Minimum Noise Figure at Vds=3V, Id=10mA, f= 4GHz : typ 0.65 dB,
at f=12 GHz : typ 1.6 dB, max1.7 dB
Associated Gain at 4 MHz : min 15 dB
at f=12 GHz : min 9 dB, typ 10.5 dB
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MGF1903 GaAsFET, N Channel Schottky Barrier Gate From the MITSUBISHI GaAs databook 1989: Small and marked : Gate. opposite: Drain. 2 x wide pins: Source. Stamp Bb Absolute Maximum Ratings: Vdgo = 6V Vsg0 = 6V Id = 80mA Pt = 240mW Tch = 175 grdC Tstg = -55 to 175 grdC. Thermal Resistance (ch-a) : - Characteristics: Idss at Vds=3V : min 15 mA, typ 40 mA, max 80 mA Vgs off at Vds=3V, Id=100uA: min -0.3V, max -3.5V Transconductance at Vds=3V, Id=10mA : min 20 mS, typ 40 mS Minimum Noise Figure at Vds=3V, Id=10mA, f= 12GHz : max 2 dB, Associated Gain at 12 GHz : min 8 dB ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MGF4910E Series Super Low Noise InGaAsa HEMT From a MITSUBISHI datasheet: Minimum Noise Figure at Vds=2V, Id=10mA, f=12GHz: MGF4914E : typ 0.8 dB, max 1 dB MGF4918E : typ 0.55dB, max 0.6 dB MGF4919E : typ 0.45dB, max 0.5 dB Associated Gain : min 9.5 dB, typ 11.5 dB From a diagram NF vs. Id at 2V, 12GHz : 0.9 dB at 2.5mA, 0.6 dB at 5 mA, 0.45 dB at 10...20 mA, 0.5 dB at 15 mA. f(GHz) Rn(Ohm) Gs(dB) Gamma opt Magn. Angle(deg.) 4 12.5 16.5 0.75 58 8 5.5 12.8 0.59 120 12 1.7 11.5 0.47 160 14 1.5 10.0 0.42 179 18 1.4 7.4 0.37 -136 S-Parameters at 2V, 10mA, 25grdC.: f S11M S11A S21M S21A 1 GHz 0.979 -24.6 4.894 156.5 4 GHz 0.880 -74.8 4.199 111.2 8 GHz 0.743 -132.0 3.248 58.8 12 GHz 0.655 177.0 2.634 7.1 14 GHz 0.632 164.4 2.477 -6.8 18 GHz 0.558 120.2 2.398 -59.0 20 GHz 0.472 94.3 2.372 -87.8 f S12M S12A S22M S22A 1 GHz 0.028 71.0 0.493 -21.2 4 GHz 0.064 38.0 0.406 -59.7 8 GHz 0.094 6.6 0.351 -108.7 12 GHz 0.098 -25.6 0.378 -151.3 14 GHz 0.097 -31.9 0.378 -163.3 18 GHz 0.107 -71.3 0.428 167.3 20 GHz 0.110 -97.6 0.421 149.9 f(GHz) K MSG/MAG(dB) 1 0.156 22.4 4 0.4 18.2 8 0.642 15.4 12 0.9 14.3 14 1.008 13.5 18 1.097 11.6 20 1.287 10.1 ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MJ13091 NPN High Voltage Switching Power Transistor From the HARRIS databook Bipolar Power Devices 1989 Maximum Ratings : Vcev at Vbe=-1.5V : 750 V Vceo : 450 V Vebo = 6 V Ic = 15 A Icm = 20 A Ib = 5 A Ibm = 10 A Ptot at 25 grdC.: 175 W at 100grdC.: 100 W Tj = Tstg = -65 to 200 grdC. Thermal Resistance Junction to Case : 1 grdC./W Characteristics at 25 grdC.: Vce(sat) at Ic=10A, Ib=2A : max 1 V (at 100 grdC.: max 2 V ) at Ic=15A, Ib=3A : max 3 V Vbe(sat) at Ic=10A, Ib=2A : max 1.5 V DC Current Gain at Ic=10A, Vce=3V : min 8 Output Capacitance at Vcb=10V, Ie=0, f=1kHz : max 350 pF Times at Vcc=250V, Ic=10A, Ib1=1.25A, Vbe(off)=5V (-5V ?!): Delay : max 50 ns Rise: max 500 ns Storage : max 2.5 us Fall : max 500 ns From the Safe Operating Areas diagram: For DC: Second Breakdown Knee at 20V/9A; 100V/0.2A; 450V/0.02A For 1ms: 80V/20A to 450V/0.3A For 10us: 300V/20A to 450V/6A ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MJ15022 NPN Power Transistor, TO3 Maximum Ratings: Vcbo = 350 V Vceo = 200 V Vcex = 400 V Vebo = 7 V Ic = 16 A Ic peak = 30 A Ib = 5 A P tot = 250 W, derate above 25 grdC.: 1.43 W / grdC. Tj = Tstg = -65 to 200 grdC. Thermal Resistance Junction to Case : max 0.7 grdC./W Characteristics at 25 grdC.: Second Breakdown Collector Current with Base forward biased: t=0.5 s non repetitive: at Vce=50V : min 5 A at Vce=80V : min 2 A DC Current Gain at Ic=8A, Vce=4V : min 15, typ 60 at Ic=16A : min 5 Vce(sat) at Ic=8A, Ib=0.8 A : max 1.4 V at Ic=16A, Ib=3.2A : max 4 V Vbe at Ic=8A, Vce=4V : max 2.2 V Current Gain Bandw.Prod. at Ic=1A,Vce=10V,f=1MHz : min 4 MHz Output Capacitance at Vcb=10V, Ie=0, f=1MHz : max 500 pF ____________________________________ MJ15023 PNP Power Transistor, TO3 Dies scheint, obwohl nicht explizit angegeben, der Komplementärtyp zu obigem zu sein. Die Tabellenwerte sind identisch, was bedeutet, daß der NPN- Typ etwas gedrosselte Werte hat, um mit dem PNP gleichzuziehen. In den wenigen typischen Diagrammen sieht man dann doch kleine Unterschiede: Der PNP Typ hat oberhalb 2A weniger Stromverstärkung. Die typische Ausgangskapazität ist beim NPN Typ nur die Hälfte des Grenzwertes, während der PNP nur knapp darunter bleibt. Unter 5 A hat der PNP Typ deutlich niedrigere Vce(sat). ______________________________________
Alle Angaben ohne Garantie. Fehler beim Abschreiben sind möglich. Wenn Sie seltsame Werte entdecken, scheuen Sie sich nicht, per email nachzufragen!
______________________________________ MJ2841 NPN SILICON POWER TRANSISTOR in TO3 case: Maximum Ratings: Vce0 = 80 V Vcb = 80 V Veb = 4 V Ic = 10 A Ib = 4 A Pd = 150 W, derate above 25 grdC.: 0.85 W/grdC Tj=Tstg = -65 to 200 grdC Thermal Resistance Junction to Case: max 1.17 grdC./W Characteristics: DC Current Gain at Ic=50mA,Vce=10V : min 40 at Ic=4A, Vce=2V : min 20, max 100 Vbe (on) at Ic=4A, Vce=2V : max 1.4 V Current Gain Bandw.Prod. at Ic=0.5A,Vce=10V,f=1MHz : min 2 MHz, max 20 MHz From a Diagram: Vce (sat) at Ic=1,5A : typ 0.2 V at Ic=10A : typ 0.8 V Safe Operating Area: DC: 10A until 15V, knee at 4A/40V; 0.2A/80V 1 ms Pulse: 10A until 30V, knee at 4A/55V; 1A/80V 0.1ms : 10A until 55V, 5A/80V ________________________________ MJ2941 PNP, complement to MJ2841, identical datas, exception: Current Gain Bandwidth Product at Ic=0.5A, Vce=10V, f=1kHz : min 4 MHz, max 20 MHz Vce (sat) at Ic=1.5A : typ 0.3 V at Ic=10A : typ 0.9 V ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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MMD7000 Silicon Epitaxial Switching Dual Diode, series connected.
From the MOTOROLA databook discrete 1974:
|2
|
---O---
1 3
View to the side having a bump in the center:
1 : Cathode
2 : Anode
3 : Common Cathode = Anode
Maximum Ratings:
Vr = 70 V
If = 200 mA
Ifm pulse 10us : 500 mA
Pd = 225 mW, derating above 25 grdC.: 2.05 mW/grdC.
Tj = Tstg = -55 to 135 grdC.
Characteristics:
Ir at Vr=50V : max 0.1 uA DC
Vf at If=1mA : min 0.55 V, max 0.7 V
at If=100mA: min 0.85 V, max 1.1 V
Capacitance at Vr=0 : typ 1.2 pF, max 2 pF
Reverse Recovery Time at If = Ir = 10 mA : typ 1.5 ns, max 5 ns
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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MMT3823 Silicon depletion-mode N-Channel Junction TET
manufactured 1974 by MOTOROLA.
View on the top having the dot in the center, clockwise:
Base (left, Gate?), Emitter (I think it meens Source),
Collector(Drain?).
But perhaps it is the wrong figure at all...
Maximum Ratings:
Vds = 30V
Vdg = 30V
Vgs = -30V
Ig = 10mA
Pd= 225 mW
Temp.: -55 to 125 grdC
Thermal Resistance Junction to Ambient = max 490grdC/W
Characteristics:
Idss = min 5 mA, max 20mA;
Forward Transfer Admittance at Vds=15V,Vgs=0 :
min 3 mS, max 8 mS (S=1/Ohm)
Input Capacitance = typ 4 pF
Reverse Transfer Capacitance at Vds=15V: typ 1 pF
Noise Figure at Vds=15V,Vgs=0, Rs=1kOhm, f=100MHz : typ 2 dB
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MP3730 PNP Germanium Power Transistor from MOTOROLA databook 1974 Maximum Ratings: Vces = 200 V Vcb = 200 V Veb = 2 V Ic = 5 A Pd = 56 W , derate above 25 grdC.: 0.67 W/grdC. Tj = Tstg = -65 to 110 grdC. Thermal Resistance Junction to Case : max 1.5 grdC./W Characteristics: DC Current Gain at Vce=4V,Ic=2.25 A : min 15 Vce(sat) at Ic=2.25 A, Ib = 150mA :max 0.75 V Vbe (on) at Vce=4V, Ib=0.5mA : max 0.6 V Current Gain Bandwidth Product at Ic=0.5 A , Vce=5V : min 1 MHz ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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MPS3640 PNP switching transistor
from a MOTOROLA datasheet:
_______
| E B C |
\_____/ bottom view
Maximum Ratings :
Vceo = 12 V (test: Ic=10mA)
Vcb = 12 V (test: Ic=0.1mA)
Veb = 4 V (test: Ic=0.1mA)
Ic = 80 mA
Pd = 350 mW, derate above Tambient=25 grdC.: 2.8 mW/grdC.
at Case=25grdC.: Pdc = 1 W ,
derate above Tcase=25grdC.: 8 mW/grdC.
Tj = Tstg = -55 to 150 grdC.
Thermal Resistance Junction to Case: max 125 grdC./W
Characteristics at 25 grdC.:
Reverse Base Current at Vce=6V, Vbe=0 : max 10 nA
DC Current Gain at Ic=10mA,Vce=0.3V : min 30, max 120
Vce(sat) at Ic=50mA, Ib=5mA : max 0.6 V
Vbe(sat) at Ic=50mA, Ib=5mA : max 1.5 V
at Ic=10mA, Ib=0.5mA : min 0.75 V, max 0.95 V
Current Gain Bandw.Prod. at Ic=10mA,Vce=5V,f=100MHz: min 500 MHz
Output Capacitance at Vcb=5V,Ie=0, f=140kHz : max 3.5 V
Input Capacitance at Vbe=0.5V,Ic=0,f=140kHz : max 3.5 pF
Times at Vcc=6V, Ic=50mA, Vbe(off)=1.9V, Ib1=Ib2=5mA :
Turn On Delay : max 10 ns
Rise : max 30 ns
Storage : max 20 ns
Fall : max 12 ns
From a diagram Current Gain Bandwidth Product vs.Ic :
Best for Vce=1V at Ic=5 to 15 mA : typ 800 MHz
Best for Vce=10V at Ic=10 to 20 mA : typ 1250MHz
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MRA1417-... Family From a TRW-Semiconductors datasheet. Broadband 1400...1700 MHz. Internally Compensated using MOS capacitors, patented by TRW. Diffused Ballast Resistors. The cutted Lead is the Collector Maximum Ratings: Breakdown Vcer at Rbe=10 Ohm, Ic=20/40/80/160mA : min 50 V Breakdown Veb0 at Ie=0.25/0.5/1/2mA : min 3.5 V Ic : 1417-2 : 0.5 A 1417-6 : 1 A 1417-11: 4 A 1417-25: 8 A Tj = Tstg = -65 to +200 grdC. Thermal Resistance Junction to Flange: 1417-2 : 15 grdC./W 1417-6 : 8 grdC./W 1417-11: 4.5 grdC./W 1417-25: 2.5 grdC./W Characteristics: Collector Cutoff Current Icbo at Ie=0, Vcb=28V / 45V : 1417-2 : 0.5 mA / 1 mA 1417-6 : 1 mA / 2 mA 1417-11: 2 mA / 4 mA 1417-25: 4 mA / 8 mA Forward Current Transfer Ratio at Vce=5V, Ic= 0.1 x Icmax : min 10, max 100 Coll.Base Capacitance at Vcb=28V,f=1MHz: 1417-2 : max 4.5 pF 1417-6 : max 8 pF 1417-11: max 12 pF 1417-25: max 24 pF Test at Vcb = 28 V, frequency = ?? Min Power Output / Min Power Gain / Min Collector Efficiency 1417-2 : 2W / 8 dB / 40% 1417-6 : 6W / 7.4 dB / 45% 1417-11: 11W / 7.4 dB / 45% 1417-25: 25W / 7 dB / 45% ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MRA1720-... Family From a TRW-Semiconductors datasheet Broadband 1700-2000 MHz. Internally Compensated using MOS capacitors, patented by TRW. Diffused Ballast Resistors. The cutted Lead is the Collector Maximum Ratings: Breakdown Vcer at Rbe=10 Ohm, Ic=20mA : min 50 V Breakdown Veb0 at Ie=0.25 mA : min 3.5 V Ic : 1720-2 : 0.5 A 1720-5 : 1 A 1720-9 : 4 A 1720-20: 8 A Tj = Tstg = -65 to +200 grdC. Thermal Resistance Junction to Flange: 1720-2 : 15 grdC./W 1720-5 : 8 grdC./W 1720-9 : 4.5 grdC./W 1720-20: 2.5 grdC./W Characteristics: Collector Cutoff Current Icbo at Ie=0, Vcb=28V / 45V : 1720-2 : 0.5 mA / 1 mA 1720-5 : 1 mA / 2 mA 1720-9 : 2 mA / 4 mA 1720-20: 4 mA / 8 mA Forward Current Transfer Ratio at Vce=5V, Ic= 0.1 x Icmax : min 10, max 100 Coll.Base Capacitance at Vcb=28V,f=1MHz: 1720-2 : max 4.5 pF 1720-5 : max 8 pF 1720-9 : max 12 pF 1720-20: max 24 pF Test at Vcb = 28 V , frequency = ?? Min Power Output / Min Power Gain / Min Collector Efficiency 1) 1720-2 : 2W / 7.5 dB / 35% 1720-5 : 5W / 6.5 dB / 40% 1720-9 : 9W / 6.5 dB / 40% 1720-20: 20W / 6 dB / 40% ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MRD3054 NPN Silicon Photo Transistor from the MOTOROLA databook 1974 TO 18 case: Bottom View, clockwise: Nose - Emitter - Base - Collector and Case Maximum Ratings : Vceo = 30 V Vcbo = 40 V Emitter Collector Veco = 5 V P tot at Ta=25 grdC.: 400 mW Top = Tstg = -65 to 200 grdC. Thermal Resistance Junction to Ambient : max 438 grdC/W Characteristics at 25 grdC.: Collector Dark Current at Vcc=20V, RL=1 MOhm : max 0.1 uA at 85 grdC.: typ 5 uA Emitter Collector Breakdown Voltage at Ie=100uA : min 5 V Collector Light Current at Vcc=20V, RL=100 Ohm, Radiation Flux Density 5 mW/square cm, 2870 K tungsten source: min 0.625 mA, max 2.5 mA Photo Current Saturated, radiation by a pulsed xenon lamp, 1 usec: Rise Time : typ 1 us Fall Time : typ 10 us Unsaturated Photo Current, radiation by GaAs LED: Rise Time : typ 2 us Fall Time : Typ 3.5 us Wavelength of maximum sensitivity : typ 0.8 um From a diagram Collector Emitter Radiation Sensitivity vs. Flux Density ( Vcc=20V, 2870K ): 0.04 mA square cm / mW at 0.1 mW/square cm 0.075 mA square cm / mW at 1 mW/square cm 0.09 mA square cm / mW at 5 mW/square cm 0.096 mA square cm / mW at 10 mW/square cm ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
MRD310 Phototransistor
MOTOROLA
Case TO18 with Lens on the top,
Bottom View, clockwise: Nose - Emitter - Base - Collector=Case
Maximum Ratings at 25 grdC.:
Collector Emitter Voltage: 50 V
Emitter Collector Voltage: 7 V
Collector Base Voltage : 80 V
Total Device Dissipation : 400 mW
Derate above 25 grdC.: 2.28mW/grdC.
Operating and Storage Junction Temp.: -65 to 200 grdC.
Characteristics at 25 grdC.:
Collector Dark Current at Vcc=20V : max 25 nA
at 100 grdC.: typ 4 uA
Light Current at Vcc=20V, RL = 100 Ohm,
at Radiation flux density = 5mW/cm2 , colortemp.=2870K :
min 1 mA, typ 2.5 mA
at Flux density = 0.5mW/cm2 from GaAsSource at Lambda=0.9um:
typ 0.8 mA
Photo Current Rise Time (pulsed GaAsSource)
at IL=1mA peak: max 2.5 us
Photo Current Fall Time (....) : max 4 us
From a diagram:
Angular Response: 80% at +/-10 degrees , 0% at +/-20 degrees
From an other diagram:
Constant Energy Spectral Response vs. Wavelenght:
35% at 0.5uM, 50% at 0.6um, 77% at 0.7um, 100% at 0.8um,
90% at 0.9um, 40% at 1.0um, 10% at 1.1um
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MRD360 NPN silicon Photo Darlington Transistor: Case TO18, Nose - E - B - C Maximum Ratings : Vceo = 40 V Vcbo = 50 V Vebo = 10 V IL = 250 mA Pd = 250 mW, derate above 25 grdC.: 1.43 mW/grdC. Tj = Tstg = -65 to 200 grdC. Characteristics : Collector Dark Current at Vce=10V : typ 10 nA, max 100 nA Light Current at Vcc=5V, RL = 10 Ohm , Radiation Flux Density H = 0.5mW/(cm x cm) from a tungsten source at 2870 K.: min 12 mA, typ 20 mA Vce(sat) at Il=10mA, H=2mW/(cm x cm) : max 1 V Times at RL=100 Ohm, IL=1mA peak: Rise : typ 40 us, max 100 us Fall : typ 60 us, max 150 us From a diagram Relative Response vs. Wavelength: at 0.45 um : 20% at 0.5 um : 36% at 0.7 um : 78% at 0.8 um :100% at 0.9 um : 89% at 1.0 um : 42% at 1.06um : 20% Angular Response: 70% at +/-6 degrees, 20% at +/-10 degrees, 0 at +/-16 degrees. Light Current (typ.) vs. Flux Density: 2mA at 0.1; 5mA at 0.2; 15mA at 0.4; 70mA at 1.0 mW/(cm x cm) ______________________________________
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______________________________________ MRD500 PIN Silicon Photo Diode for laser detection MOTOROLA 1974 The lead near the nose is the anode, the other = case + cathode. The MRD500 has a convex lens, the MRD510 a flat glass. Maximum Ratings: Reverse Voltage = 100 V Total Dissipation at 25 grdC = 100 mW Derate above 25 grdC : 0.57 mW/grdC Temp.: -65 to 200 grdC Characteristics: Dark Current at Vr=20V,Rl=1MOhm, at 25 grdC : max 2 nA at 100 grdC : typ 14 nA Reverse Breakdown Voltage at Ir=10uA : min 100V, typ 200V Forward Voltage at If=50mA: max 1.1 V Series Resistance at If=50mA : Rs = max 10 Ohm Total Capacitance at Vr=20V, f=1MHz : max 4 pF Radiation Sensitivity at Vr=20V, at Radiation Flux Density = 5 mW/cm x cm, at Color Temperature 2870 K : S R = min 1.2 typ 1.8 (uA x cm x cm /mW) Sensitivity at 0.8 um, Vr=20V, at Radiation Flux Density = 0.5 mW/cm x cm : typ 6.6 (...) Response Time at Vr=20V, Rl = 50 Ohm: typ 1 ns Wavelength of Peak Spectral Response : typ 0.8 um ______________________________________
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______________________________________ MRF455 RF Power Transistor MOTOROLA Absolute Maximum Ratings: Vceo = 18 V Vces = 36 V Vebo = 4 V IC continuous = 15 A Pd at 25 grdC.: 175 W, derate above 25grdC.: 1 W/grdC Thermal Resistance Junction to Case: max 1 grdC/W Characteristics: DC Current Gain at Vce= 5V , Ic= 5A : min 10, max 150 Output Capacitance at Vcb= 12,5V, Ib=0, f=1MHz : max 250 pF Output Power at f= 30MHz , Vcc= 12,5V : typ 60 W Power Gain at the same conds. : min 13 dB Coll. Efficiency at the same conds. : min 55 % Series Equivalent Input Impedance : typ 1.66 Ohm - j 0.844 Ohm .. Output Imp.: typ 1.73 Ohm - j 0.188 Ohm Parallel Equivalent Input Impedance : typ 2.09 Ohm / 1030 pF .. Output Imp.: typ 1.75 Ohm / 330 pF From a diagram Pout vs. Pin at Vcc=13.6 V: 35 W at 0.3 W ; 44 W at 0.5 W ; 54 W at 1 W ; 65 W at 2 W ; 80 W at 5 W ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MRF548 NPN Transistor for common base RF amplifiers From a MOTOROLA databook RF-DEVICE 1986: BASE - EMITTER - BASE - COLLECTOR (cutted pin) Maximum Ratings: Vceo = 70 V Vcbo = 120 V Vebo = 3 V Ic = 400 mA Total Device Dissipation at Tcase = 75 grdC.: 5 W Operating Junction Temp.: 200 grdC. Tstg = -65 to 150 grdC. Thermal Resistance Junction to Case: max 25 grdC./W Characteristics: DC Current Gain at Ic=50mA, Vce=10V : h FE = min 15 Output Capacitance at Vcb=10V, Ie=0, f=1MHz : typ 2.9 pF Collector Base Capacitance at Vcb = 10V, Ie=0, f=1MHz : typ 2pF, max 2.5 pF Input Capacitance at Veb=3V : typ 12.5 pF Common Base Gain at Vcb=10V, Ic=100mA, f=250MHz: min 4.5dB, typ 5.5 dB ________________________________________ MRF549 PNP Transistor for common base RF amplifiers All values as MRF548 except: Vcbo = 100V Input Capacitance = 10.5 pF ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
MRF646 UHF Power Transistor
MOTOROLA databook RF DEVICE 1986:
Maximum Ratings :
Vceo = 16 V
Vcbo = 36 V
Vebo = 4 V
Ic = 9 A
Pd = 117 W , derate above 25 grdC : 0.67 W/grdC.
Tstg = -65 to 150 grdC.
Thermal Resistance Junction to Case : 1.5 grdC./W
Characteristics :
DC Current Gain at Ic=4A, Vce=5V : min 20, typ 70, max 150
Output Capac. at Vcb=12.5V, Ie=0, f=1MHz : typ 90 pF, max 125 pF
Funct. Test(Common Emitter Ampl.) at Vcc=12.5V, Pout=45W, f=470MHz :
Power Gain at Ic(max)=5.8Adc : min 4.8 dB, typ 5.4 dB
Input Power: typ 13 W, max 15 W
Collector Efficiency at Ic(max)=5.8Adc: min 55%, typ 60%
Load Mismatch Stress at Vcc=16V,
Pin = 150% of drive required for 45W at 12.5V:
No degradation in Output Power at VSWR=20:1, all Phase angles.
Series Equivalent Input Impedance : typ 1.4 Ohm + j 4 Ohm
Series Equivalent Output Impedance: typ 1.2 Ohm +j 2.8 Ohm
Für 450 MHz von einer kleinen Tabelle:
Zin = 1.21 Ohm +j 3.9 Ohm
Zol = 1.27 Ohm +j 2.79 Ohm
Irgendwelche konkreten Linearitätsangaben finde ich nicht im Datenblatt.
Deshalb hier noch in Kurzform das Diagramm :
typ. Output Power versus Input Power für 470MHz und 13.6 V:
25W/6W, 42W/10W, 58W/15W, 65W/20W
Ich habe schon wesentlich krummere Kurven gesehen.
Auch die Frequenzabhängigkeit ist relativ gering. Bei kleiner Leistung
dürfte Pout bei 440MHz ca 10% geringer als bei 470MHz sein, bei hoher
Leistung etwa gleich. Leider sind die flachen Kurven erst oberhalb 450
MHz dargestellt. Aber es würde bedeuten, daß im Amateurband die
Linearität besser wäre.
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______________________________________ MRF754 NPN Silicon High Frequency Transistor from the MOTOROLA databook RF DEVICE 1986 Case 249-05 (x- case) Seating Plane = Gnd = Emitter Collector Lead is cutted, opposite: Base Maximum Ratings : Vceo = 13 V Vebo = 4 V Ic = 3 A Pd = 37.5 W, derate above 25 grdC.: 214 mW/grdC. Tstg = -65 to 150 grdC. Thermal Resistance Junction to Case : max 4.7 grdC./W Characteristics : DC Current Gain at Ic=200 mA, Vce=5 V : min 25 Output Capacitance at Vcb=7.5 V, Ie=0, f=1MHz : typ 50 pF, max 65 pF Common Emitter Amplifier at Vcc=7.5V, Pout=8W, f=470MHz : Power Gain : min 6 dB, typ 7 dB Collector Efficiency: min 55 % Series Equivalent Input Impedances: 450 MHz : 1 Ohm +j 1.8 Ohm 470 MHz : 0.9 Ohm +j 2.1 Ohm 512 MHz : 0.9 Ohm +j 2.3 Ohm Series Equivalent Output Impedances: 450 MHz : 3.7 Ohm -j 0.3 Ohm 470 MHz : 3.4 Ohm -j 0.3 Ohm 512 MHz : 2.9 Ohm -j 0.2 Ohm ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MRF844 NPN Silicon RF Power Transistor from the MOTOROLA databook RF DEVICE 1986 Collector Lead is cutted, opposite: Emitter, 4 corner leads: Base Maximum Ratings : Vceo = 16 V Vcbo = 36 V Vebo = 4 V Ic = 10.9 A Pd = 115 W, derate above 25 grdC.: 0.66 W/grdC. Tstg = -65 to 150 grdC. Thermal Resistance Junction to Case : max 1.5 grdC./W Characteristics : DC Current Gain at Ic=2A, Vce=5 V : min 10, typ 40 Output Capacitance at Vcb=12.5 V, Ie=0, f=1MHz : typ 60 pF, max 90 pF Common Base Amplifier at Vcc=12.5V, Pout=30W, f=870MHz : Power Gain : min 5.2 dB, typ 6 dB Collector Efficiency: min 50 %, typ 55 % Load Mismatch Stress: No degradation in output power for Vcc=15.5V,Pin=12W,f=870MHz, VSWR=20:1, all phase angles Series Equivalent Input Impedances: 800 MHz : 0.8 Ohm +j 3.7 Ohm 836 MHz : 0.9 Ohm +j 4.0 Ohm 870 MHz : 1.0 Ohm +j 4.4 Ohm 900 MHz : 1.0 Ohm +j 4.7 Ohm Series Equivalent Output Impedances: 800 MHz : 1.4 Ohm +j 2.3 Ohm 836 MHz : 1.3 Ohm +j 2.4 Ohm 870 MHz : 1.25Ohm +j 2.6 Ohm 900 MHz : 1.2 Ohm +j 2.7 Ohm ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________
MRF966 N-Channel Dual Gate GaAsFET
Top view, clockwise: long lead is drain,
source, G1, G2.
Maximum Ratings:
Vds = 10 V
Vg1s = Vg2s = - 8 V / + 1 V
Id = 60 mA
Pd 0 350 mW
Tj = Tstg = -65 to 125 grdC.
Characteristics at 25 grdC.:
Gate1 to Source Cutoff Voltage at Vds=5V, Vg2s=0 :
min -2 V, max -4.5 V
Gate2 to Source Cutoff Voltage at Vds=5V, Vg1s=0 :
min -2 V, max -4.5 V
Idss at Vds=5V, Vg1s=Vg2s=0: min 30mA, typ 50mA, max 80mA
Forward Transfer Admittance at Vds=5V, Vg2s=0, Id=10mA, 1 kHz:
min 14 mmhos, typ 20 mmhos
Capacitances at Vds=5V, Vg2s=0, Id=10mA, 1 MHz :
Input : typ 0.45 pF
Reverse Transfer : typ 0.04 pF
Test at Vds=5V, Vg2s=0, Id=10mA, f=1 GHz :
Noise Figure : typ 1.2 dB, max 1.5 dB
Common Source Power Gain : min 15 dB, typ 18 dB
Output Power at 1 dB Compression Point: typ 10 dBm
Intermodulation Distortion
at Pin=-40dBm, 995 MHz and 1001 MHz: typ -65 dB
______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MV1638 Tuning Diode From the MOTOROLA databook Discrete Volume 3, 1974. Maximum Ratings: Reverse Voltage: 20 V (for Ir=10uA) Forward Current : 250 mA Device Dissipation at Case=25grdC.: 2 W Derate above 25 grdC.:13.3 mW/grdC. Device Dissipation at Air=25grdC.: 400 mW Derate above 25 grdC.: 2.67 mW/grdC. Junction Temp. : 175 grdC. Storage Temp.: -65 to 200 grdC. Characteristics: Reverse Leakage Current at Vr=15Vdc: max 0.1 uA Series Inductance at lead length=1/16'', f=250MHz: typ 5nH, max 10nH Case Capacitance = typ 0.25 pF Diode Capacitance at Vr=4V: min 29.7, typ 33, max 36.3 pF Tuning Ratio C2/C20: min 2, max 3.2 Figure of Merit, Q at Vr=4V, f=50MHz: min 200 ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MV1863 Voltage Variable Capacitance Diode (From a Motorola databook 1974) Coaxial case, the inner (smaller diameter) pin is cathode. Maximum Ratings : Vr = 60 V If = 250 mA Pd at 25 grdC.: 5 W derate above 25 grdC.: 28.6 mW/grdC. Tj = Tstg = -65 to 200 grdC. Characteristics: Leakage Current at Vr=55V , 25 grdC. : max 0.02 uA at 150 grdC.: max 20 uA Case Capacitance at f=1MHz : typ 0.15 pF Series Inductance at self resonant frequency : typ 0.8 nH Diode Capacitance at Vr=4V, f=1MHz : min 4.23 pF, nom. 4.7 pF, max 5.17 pF Capacitance Ratio C4/C60 at f=1MHz : min 2.6, max 3.3 Figure of Merit at Vr=4V, f=100MHz From a diagram Capacitance Variation vs. Temperature: at 100 grdC., in relation to 25 grdC., positive %: at Vr=50V : 0.6% at Vr=10V : 1.2% at Vr= 4V : 2.3% at Vr= 2V : 4 % From a diagram Normalized Series Resistance vs. Vr ( in relation to resistance at 4V ) at Vr=1V : 1.5 at Vr=10V: 0.85 at Vr=60V :0.67 ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MV1870 Silicon Voltage Variable Capacitance Diode MOTOROLA Maximum Ratings : Vr = 60 V DC If = 250 mA RF Power Input with adequate heatsink : 5 W Total Device Dissipation ambient at 25 grdC.: 400 mW Derate above 25 grdC,: 2.67 mW / grdC. Leads at 25 grdC. : 2 W, derate 13.3 mW/grdC. Operating Junction Temp : 175 grdC. Tstg = -65... 200 grdC. Characteristics: Diode Capacitance at Vr=4V, f=1MHz : min 13,5pF, typ 15pF, max16.5pF Cap Ratio C4/C60 : min 3.0, typ 3.2, max 3.5 Q, Figure of Merit at f=50MHz at Vr=4V : min 400 at Vr=60V: min 700 Series Inductance, measured at Lead Stop 1/16'' : typ 5 nH at 250MHz Case Capacitance at 1 MHz : typ 0.17 pF Diode Cap Temp Coefficient at Vr=4V, f=1MHz : typ 200, max 300 ppm/grdC. Cutoff Frequency at Vr=60V,f=50MHz : typ 45 GHz ________________________________ MV209 Silicon Voltage Variable Capacitance Diode MOTOROLA Bottom view: ______ | C A | A=Anode \____/ Maximum Ratings : Vr = 30 V DC If = 200 mA Total Device Dissipation ambient at 25 grdC.: 280 mW Derate above 25 grdC,: 2.8 mW / grdC. Operating Junction Temp : 125 grdC. Tstg = -65... 150 grdC. Characteristics: Diode Capacitance at Vr=3V, f=1MHz : min 26pF, typ 29pF, max32pF Cap Ratio C3/C25 : min 5.0, max 6.5 Q, Figure of Merit at f=50MHz, Vr=3V : min 200 Series Inductance, measured at Lead Length 1/8'' : typ 6 nH at 250MHz Case Capacitance at 1 MHz : typ 0.2 pF Diode Cap Temp Coefficient at Vr=3V, f=1MHz : typ 300, max 400 ppm/grdC. ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ MV2108 Voltage Variable Capacitance Diode MOTOROLA databook 1974. Case: 2-pin TO92 Bottom view: _________ | A C | \_______/ Maximum Ratings: Vr = 30 V If = 200 mA Ptot = 280 mW Tj = 125 grdC. Storage Temp.: -65 to 150 grdC. Characteristics at 25 grdC.: Series Inductance at Lead Length 1/16'', f=250MHz : typ 6 nH Case Capacitance at f=1MHz : 0.18 pF Diode Cap. Temperature Coefficient at Vr=4V, f=1MHz : max 400 ppm/grdC. Diode Cap. at Vr=4V, f=1MHz: min 24.3, typ 27, max 29.7 pF Figure of merit, Q at Vr=4V, f=50MHz : min 300 Tuning Ratio C2 / C30 : min 2.5, typ 3, max 3.2 ______________________________________
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______________________________________ MV 2305 epitaxial Voltage Variable Capacitance Diode MOTOROLA _______ | A C | bottom view \_____/ Maximum Ratings: Vr = 20 V If = 400 mA pd = 500 mW Tj = 125 grdC. Characteristics. Reverse Current at Vr=15V : max 0.1 uA Series Inductance: typ 6 nH Case Capacitance : typ 0.18 pF Diode Cap. at Vr=4V, f=1MHz: min 198 pF, typ 220 pF, max 242 pF Figure of Merit, Q, at 4V, 20 MHz : min 150 Cap. Ratio C2/C20 : min 2.3 Im beidachsig logarithmischen Diagramm ist die Kapazitätskurve eine Gerade. Es handelt sich also um eine klassische Kapazitätsdiode ( keine hyperabrupte oder anders manipulierte). ______________________________________
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______________________________________ Motorola Datenblatt im Datenbuch von 1974 enthält nur wenige Daten zur MZ610: Precision Reference Diode with certified Zener Voltage Time Stability. 1000 Stunden protokollierter Test!! Operating Temp. Range: 25 to 100 grdC. (Protokoll bei 25, 75 und 100 grdC.) Vz = 6.2 V +/- 5 % Iz = 7.5 mA 1) Max Variation im Temp.Bereich: 2.5 mV dc Voltage Time Stability 1000 hours: max 60 uV , 10 ppm/1000 h Dynamic Impedance: 10 Ohm at Iz = 7.5 mA dc, Iac = 0.75 mA 1) bei der Certification auf +/- 0.05 uA konstantgehalten! Leider finde ich nirgens eine Angabe, aus welchem Typ diese Diode selektiert wurde. Vielleicht aus der 821er Reihe, die damals der Standard für temperaturkompensierte 6.2 V- Zenerdioden war. ______________________________________
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