IGT4E10 Isulated Gate Bipolar Transistor
N-Ch. Enhancement conductivity modulated PowerFET
from a Harris datasheet
Case TO220, Gate(left) - Drain=Coll. - Source(=Emitter)
Maximum Ratings:
Vces : 500V
Vcgr : 500V
Ic (continuous) at 100 grdC. : 10 A
at 25 grdC. : 18 A
Pulsed Coll.Curr. Icm : 40A
Gate Emitter Voltage : +/- 25 V
Total Power Dissipaton at 25 grdC : 75 W
Derating 0.6 W/grdC
Gate Threeshold Voltage at Ic=250uA : 2 to 5 V
Coll.Em.Saturation Voltage at Ic=10A, Vge=15V : max 2,7 V
Capacitances at Vge=0, Vce=25V, f=1MHz:
Input : typ 1050 pF
Output : typ 340 pF
Reverse : typ 10 pF
Times at Ic=10A, Vce=500V, Rg(on)=50 Ohm, Rge=100 Ohm,
resistive load :
Turn on Delay : typ 100 ns
Rise Time.... : typ 150 ns
Turn off delay: typ 0.5 us
Fall Time.... : typ 4 us
Thermal Resistance Junction to case= 1.67 grdC/W
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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IRF740 N-Channel Power MOSFET Avalanche Energy Rated
From a HARRIS databook 1992
Absolute Maximum Ratings:
Vdss breakdown at Vgs=0, Id=250 uA : min 400 V
Id = 10 A at 25 grdC., 6.3 A at 100 grdC.
Id pulsed = 40 A
Single Pulse Avalanche Energy 520 mJ
Vgs = +/- 20V
Pd = 125 W
Derate Factor 1 W/grdC.
Temp.: -55 to 150 grdC.
Thermal Resistance Junction to case: max 1 grdC/W
Characteristics at 25 grdC.:
Gate Threshold Voltage at Vds = Vgs, Id=250uA:
min 2V, max 4 V
Idss at Vds=400V, Vgs=0 : max 250 uA
Rds (on) at Vgs= 10V, Id=5.2 A pulsed:
typ 0.47 Ohm, max 0.55 Ohm
Forward Transconductance at Vds=50V, Id=5.2 A pulsed :
min 5.8 S, typ 8.9 S
Capacitances at Vgs=0V, Vds= 25V, f= 1MHz:
Input Cap.: typ 1250 pF
Output Cap.= typ 300 pF
Reverse Transfer Cap. = typ 80 pF
Times at Vdd=200V, Id=10A, Rg=9.1 Ohm :
Turn On Delay: max 21 ns
Rise: max 41 ns
Turn Off Delay: max 75 ns
Fall: max 36 ns
Internal Drain Inductance : typ 3.5 nH
Internal Source Inductance : typ 7.5 nH
Total Gate Charge atVgs=10V, Id=10A, Vds=320V :
typ 41 nC, max 63 nC
Gate to Source Charge : typ 6.5 nC
Gate to Drain Miller Charge : typ 23 nC
Antiparallel Diode forward Voltage: max 2 V at 10 A
Reverse Recovery Time at 10 A, 100A/us:
min. 170 ns, typ 390 ns, max 790 ns
Charge at the same conds.: min 1.6 uC, typ 4.5 uC, max 8.2 uC
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ IRF 9612 P-Channel MOSFET. Absolute Maximum Ratings: Vds = -200V Vdg = -200V Vgs = +/- 20V Id = -1.5A (at 100grdC = max 0.9A) Id (pulsed) = -6 A Pd (Tc=25grdC)= 20W Linear derating 0.16 W/grdC Characteristics: R ds(on) at Vgs=-10V,Id=-0.9A : max 4.5 Ohm Forward Transconductance at Id=-0.9A : min 0.9, typ 1.3 S Input Capacitance at Vgs= 0 V : max 300 pF Output Capacitance at Vds=-25V : max 100 pF Reverse Transfer Cap at Vds=-25V : max 35 pF Times at Vdd = 160V, Id=0.9A,Z=50Ohm: Turn On Delay: max 15ns Rise : max 25ns Turn Off Delay: max 15ns Fall : max 15ns Source Drain antiparallel Diode: Is = max 1,5 A Ism(pulsed) = max 6A Forward Voltage at Is= 1.5A : max 5.5V Reverse Recovery Time at If=1.75A, dI/dt=100A/us: typ 240ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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IRFD1Z3 HEXFET N-Channel
DIP-4 . The 2 connected pins (3 and 4) are Drain,
Pin1 : Gate, Pin2 : Source
Absolute Maximum Ratings :
Vds = 60 V
Vdg with Rgs=20 kOhm : 60 V
Id = 0.4 A
Id pulsed : 3.2 A
Vgs = +/- 20 V
Tj = Tstg = -55 to 150 grdC.
Thermal Resistance Junction to Ambient : max 120 K/W
Characteristics :
Gate Threshold Voltage at Vds=Vgs, Id=250 uA : min 2 V, max 4 V
Idss at Vds=60V, Vgs=0 : max 250 uA
at 125 grdC. : max 1 mA
Id (on) at Vgs=10V : min 0.4 A
Rds (on) at Vgs=10V, Id=250 mA :typ 2.8 Ohm, max 3.2 Ohm
Forward Transconductance at Id=250mA : min 0.25 S, typ 0.35 S
Capacitances at Vgs=0,Vds=25V, f=1MHz :
Input : max 70 pF
Output : max 30 pF
Reverse Transfer : max 10 pF
Times at Vdd=30V,Id=250mA, Zo=50 Ohm :
ON Delay : max 20 ns
Rise : max 25 ns
OFF Delay : max 25 ns
Fall : max 20 ns
Source Drain Diode:
Is max 400 mA
Is max pulsed : 3.2 A
Vf at Is=400 mA : max 1.3 V
Reverse Recovery Time at If=500mA, dIf/dt = 100A/us,
Tj = 150 grdC.: typ 100 ns
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ IRFD213 N Channel MOSFET International Rectifier Absolute Maximum Ratings : Vds : 150 V Vdg at Rgs=20kOhm : 150 V Vgs : +/- 20 V Id at 25 grdC.: 450 mA Id pulsed : 1.8 A Pd at Ta=25 grdC.: 1 W Tj : -55 to 150 grdC. Characteristics : Gate Threshold Voltage at Id=250uA : min 2 V, max 4 V Rds(on) at Vgs=10V, Id=300mA : typ 1.5, max 2.4 Ohm Forward Transconductance at Id=300mA : min 0.5 S, typ 0.8 S Capacitances at Vgs=0,Vds=25V, f=1MHz : Input : max 150 pF Output : max 80 pF Reverse Transfer : max 25 pF Times at Vdd =75V,Id=300mA, Zo=50Ohm: On- delay : max 15 ns Rise : max 25 ns Off- delay : max 15 ns Fall : max 15 ns Antiparallel Source Drain Diode Forward Voltage at 450mA : max 1.8 V Reverse Recovery Time at If=600mA, dIf/dt = 100A/us : typ 290 ns ____________________________________ IRFD9213 P Channel MOSFET: (neg.Vorzeichen weggelassen) Absolute Maximum Ratings : Vds : 150 V Vdg at Rgs=20kOhm : 150 V Vgs : +/- 20 V Id at 25 grdC.: 300 mA Id pulsed : 1.2 A Pd at Ta=25 grdC.: 1 W Tj : -55 to 150 grdC. Characteristics : Gate Threshold Voltage at Id=250uA : min 2 V, max 4 V Rds(on) at Vgs=10V, Id=300mA : typ 3.5, max 4.5 Ohm Forward Transconductance at Id=300mA : min 0.9 S, typ 1.3 S Capacitances at Vgs=0,Vds=25V, f=1MHz : Input : max 300 pF Output : max 100 pF Reverse Transfer : max 35 pF Times at Vdd =75V,Id=300mA, Zo=50Ohm: On- delay : max 15 ns Rise : max 25 ns Off- delay : max 15 ns Fall : max 15 ns Antiparallel Source Drain Diode Forward Voltage at 300mA : max 5.5 V Reverse Recovery Time at If=400mA, dIf/dt = 100A/us : typ 240 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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IRFF121 N-Channel Power MOSFET
from a HARRIS databook 1992
Absolute Maximum Ratings:
Vds = 80 V
Vdgr = 80 V (Rgs=20 kOhm)
Id = 6 A
Id pulsed = 24 A
Single Pulse Avalanche Energy
at Vdd=25V, L=1.5mH, Rgs=25 Ohm, I peak=6A : 36 mJ
Pd = 20 W, derating above 25 grdC.: 0.16 W/grdC.
Top = Tstg = -55 to 150 grdC.
Rhermal Resistance Junction to Case: max 6.25 grdC./W
Characteristics at 25 grdC.:
Gate Threshold Voltage at Id=250uA : min 2 V, max 4 V
Idss = max 250 uA, at 100 grdC : max 1 mA
Id(on) at Vgs=10V : min 6 A
Rds(on) at Vgs=10V, Id=3A : typ 0.25 Ohm, max 0.3 Ohm
Forward Transconductance at Id=3A : min 1.5 S, typ 2.9 S
Capacitances at Vgs=0, Vds=25V,f=1MHz :
Input : typ 450 pF
Output: typ 20 pF
Reverse Transfer : typ 50 pF
Times at Id=6A, Rg=9.1 Ohm, Vdd=40V:
Turn ON Delay : max 40 ns
Rise : max 70 ns
Turn OFF Delay : max 100ns
Fall : max 70 ns
Sorce Drain Diode Forward Voltage at 6A : max 2.5 V
Reverse Recovery time at 6A, dIf/dt=100A/us, 150 grdC,:
typ 230 ns
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ IRFJ140 N Channel Power MOSFET from an International Rectifier datasheet 1984: Gehäuse TO3 Absolute Maximum Ratings : Vds = 100 V Vdgr = 100 V Vgs = +/- 20 V Id at 25 grdC. : 16 A, Source Drain Diode : 15 A at 100 grdC.: 13 A Ism pulsed = 60 A , Source Drain Diode : 40 A I LM , inductive current, clamped, L=100uH : 60 A Pd = 70 W, derating above 25 grd 0.55 W/K Tj = Tstg = -55 to 150 grdC. Thermal Resistance Junction to Case : max 1.8 K/W Characteristics : Gate Threshold Voltage : min 2 V, max 4 V Id(on) at Vgs=10V : min 15 A Rds(on) at Id=10A, Vgs=10V : typ 0.07 Ohm, max 0.085 Ohm Forward Transconductance at Id=10A : min 6 S, typ 10 S Capacitances at Vgs=0, Vds=25V, f=1MHz : Input : max 1600 pF Output : max 800 pF Reverse Transfer : max 300 pF Times at Vdd=30V, Id=10A, Zo = 4.7 Ohm : Turn on delay : max 30 ns Rise : max 60 ns Turn off delay : max 80 ns Fall : max 30 ns Source Drain Diode : Forward Voltage at Is=15A, Vgs=0 : max 2.5 V Reverse Recovery Time at Is=15A, dIf/dt = 100A/us : max 500 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ IRFP441 from a Harris = INTERSIL databook Absolute Maximum Ratings: Vdss = 450V Id = 8.8A bei 25 grdC., 5.6A bei 100 grdC. Id peak = 35A Single Pulse Avalanche Energy 480 mJ Vgs = +/- 20V Pd = 150W Derate Factor 1.2 W/grdC. Temp.: -55 to 150 grdC. Thermal Resistance Junction to case: max 0.83 grdC/W Characteristics: Gate Threshold Voltage at Id=250uA: min 2V, max 4 V Rds (on) at Vgs= 10V, Id=4.9A: max 0.85 Ohm Forward Transconductance at Vds=50V, Id=4.9A: min 5.3 S, typ 8.2 S Capacitances at Vgs=0V, Vds= 25V, f= 1MHz: Input Cap.: typ 1225pF Output Cap.= typ 200pF Reverse Transfer Cap. = typ 85pF Times at Vdd=250V, Id=8A,Rg=9.1Ohm: Turn On Delay: max 21ns Rise: max 35ns Turn Off Delay: max 74ns Fall: max 30ns Antiparallel Diode forward Voltage: max 1.8V at 8.8A Reverse Recovery Time at 8A, 100A/us: min. 200ns, max 970 ns ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ IRFP460 N-Channel Power MOSFET Avalanche Energy Rated From a HARRIS databook 1992 Absolute Maximum Ratings: Vdss breakdown at Vgs=0, Id=250 uA : min 500 V Id = 20 A at 25 grdC., 12 A at 100 grdC. Id pulsed = 80 A Single Pulse Avalanche Energy 960 mJ Vgs = +/- 20V Pd = 250W Derate Factor 2 W/grdC. Temp.: -55 to 150 grdC. Thermal Resistance Junction to case: max 0.5 grdC/W Characteristics at 25 grdC.: Gate Threshold Voltage at Vds = Vgs, Id=250uA: min 2V, max 4 V Idss at Vds=500V, Vgs=0 : max 250 uA Rds (on) at Vgs= 10V, Id=11 A pulsed: typ 0.24 Ohm, max 0.27 Ohm Forward Transconductance at Vds=50V, Id=11 A pulsed : min 13 S, typ 19 S Capacitances at Vgs=0V, Vds= 25V, f= 1MHz: Input Cap.: typ 4100 pF Output Cap.= typ 480 pF Reverse Transfer Cap. = typ 84 pF Times at Vdd=250V, Id=21A, Rg=4.3 Ohm, Rd = 12 Ohm : Turn On Delay: max 35 ns Rise: max 120 ns Turn Off Delay: max 130 ns Fall: max 98 ns Internal Drain Inductance : typ 5 nH Internal Source Inductance : typ 13 nH Total Gate Charge atVgs=10V, Id=21A, Vds=400V : typ 120 nC, max 190 nC Gate to Source Charge : typ 18 nC Gate to Drain Miller Charge : typ 62 nC Antiparallel Diode forward Voltage: max 1.8V at 21 A Reverse Recovery Time at 21 A, 100A/us: min. 280ns, typ 580 ns, max 1200 ns Charge at the same conds.: min 3.8 uC, typ 8.1 uC, max 18 uC ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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