FLL171ME L-Band High Power GaAsFET, FUJITSU Absolute Maximum Ratings : Vds = 15 V , operating 10 V Vgs = -5 V (breakdown test at Igs= -30uA) Ig = +2 mA / -1 mA Ptot = 7.5 W Tj = Tstg = -65 ... 175 grdC. Thermal Resistance Channel to Case : typ 15, max 20 grdC./W Characteristics at 25 grdC.: Idss at Vds=5V, Vgs=0 : typ 600 mA, max 900 mA Transconductance at Vds=5V, Id=400 mA : typ 300 mS Pinch -off Voltage at Vds=5V, Id=30mA : min -1 V, typ -2 V, max -3.5 V Test at Vds=10V, Ids=0.6 x Idss, f = 2.3 GHz : Output Power at 1 dB G.C.P : min 31.5 dBm, typ 32.5 dBm Power Gain at 1dB G.C.P : min 11.5 dB, typ 12.5 dB Power added Efficiency : typ 46 % ______________________________________
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______________________________________ FLL55MK L-Band High Power GaAsFET, FUJITSU Absolute Maximum Ratings : Vds = 15 V , operating 10 V Vgs = -5 V (breakdown test at Igs= -90uA) Ig = +8 mA / -2.2 mA Ptot = 21.4 W Tj = Tstg = -65 ... 175 grdC. Thermal Resistance Channel to Case : typ 6.2, max 7 grdC./W Characteristics at 25 grdC.: Idss at Vds=5V, Vgs=0 : typ 1.8 A, max 2.7 A Transconductance at Vds=5V, Id=1.1 A : typ 1000 mS Pinch -off Voltage at Vds=5V, Id=90mA : min -1 V, typ -2 V, max -3.5 V Test at Vds=10V, Ids=0.55 x Idss, f = 2.3 GHz : Output Power at 1 dB G.C.P : min 35.5 dBm, typ 36 dBm Power Gain at 1dB G.C.P : min 10.5 dB, typ 11.5 dB Power added Efficiency : typ 37 % ______________________________________
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______________________________________ FSX52WF GaAsFET The type was made by FUJITSU. I do'nt have an original datasheet. Gate is the triangle-pin, drain is the rect. pin, source is the flange. Vds max 12V Vgs max -5V Power Diss at 25grdC max 1,5 W Channel Temperature max 175 grdC Thermal Resistance Channel to Case : max 100 grdC/W Idss at Vds=3V, Vgs=0 : 100 ....220 mA Transconductance at Vds=3V, Ids=60mA : typ 50mS Pitch off Voltage at Vds=3V, Ids=2mA : min -2V, typ -4V Power Gain at Vds=8V, Ids=0,5 x Idss, Pin=13 dBM, f=8GHz : min 9 dB, typ 10dB Output Power at the same conditions : min 22 dBm, typ 23 dBm Noise Figure at Vds=3V, Ids=30mA, f=8GHz : typ 2,5 db I have some very little diagrams not sufficient to be copyed. S- Parameters are listed from 2GHz to 12GHz. ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
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