ESM16 NPN Leisungstransistor im TO3-Gehäuse von Thomson ,1981. Absolute Maximum Ratings: Vcbo = 450 V Vceo = 400 V Vebo = 10 V Ic = 10 A ( 15A for 10 ms ) Ib = 2 A Ptot = 150 W at 25 grdC. Junction Temp.: -65 to 200 grdC. Thermal Resistance Junction to Case : max 1.17 grdC./W Characteristics at 25 grdC.: Static Forward Current Transfer Ratio at Vce = 10V: at Ic=0.4 A : min 20, max 80 at Ic=2A : min 30 at Ic=5A : min 20 Coll.Emitter Saturation Voltage (Basis-Emitter Voltage): at Ic=2A, Ib=0.25A : max 0.5 V (Vbesat = max 1V ) at Ic=5A, Ib=1A : max 1 V (Vbesat = max 1.5V ) Second Breakdown Coll.Current at Vce=80V,t=1s : min 0.4 A Derating: at 200 grdC. 0.12A Transition Frequ. at Vce=10V, Ic=0.2A, f=10MHz : min 5 MHz Times at Vcc=30V, Ic=5A, Ib = 1A / -1A : Turn ON (Delay + Rise) typ 0.85 us Fall : typ 0.5 us Carrier Storage: typ 1.5 us ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ ESM3004 NPN high voltage switching transistor manufactured 1982 by THOMSON-CSF. Absolute limiting ratings: Vceo = 400V Vcev at Vbe=-1.5V = 600V Vebo = 10V Ic RMS = 120A Icm = 150A (pulse < 1ms) Ib RMS = 20A Ibm = 40A (pulse < 1ms) Power Diss. at Tcase=75grdC = 400W Junction Temperature: -65 to 175 grdC Thermal resistance junction to case: 0.25 grdC/W Characteristics at 25grdC: Vce sat (pulse tested t < 300us) at Ic=65A, Ib=13A : max 1.5V at Ic=100A, Ib=33A , Tj=100 grdC.: max 2V Vbe sat at Ic=65A, Ib=13A: max 2.2V Switching Times on resistive load, Vcc=200V, Ic=50A, Ib1 = -Ib2 = 10 A : Rise: typ 1us, max 1.5us Storage: max 3.5 us Fall: typ 0.5 us, max 1 us ______________________________________
Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!
______________________________________ ESM3005 NPN high voltage switching transistor manufactured 1982 by THOMSON-CSF. Absolute limiting ratings: Vceo = 500V Vcev at Vbe=-1.5V = 600V Vebo = 10V Ic RMS = 120A Icm = 150A (pulse < 1ms) Ib RMS = 20A Ibm = 40A (pulse < 1ms) Power Diss. at Tcase=75grdC = 400W Junction Temperature: -65 to 175 grdC Thermal resistance junction to case: 0.25 grdC/W Characteristics at 25grdC: Vce sat (pulse tested t < 300us) at Ic=50A, Ib=10A : max 1.5V at Ic=80A, Ib=27A , Tj=100 grdC.: max 2V Vbe sat at Ic=50A, Ib=10A: max 2.2V Switching Times on resistive load, Vcc=200V, Ic=50A, Ib1 = -Ib2 = 10 A : Rise: typ 1us, max 1.5us Storage: max 3.5 us Fall: typ 0.5 us, max 1 us ______________________________________
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ESM752 NPN high voltage switching transistor
manufactured 1982 by THOMSON-CSF.
Absolute limiting ratings at 25 grdC.:
Vceo = 600 V (A-type : 700 V )
Vcev at Vbe=-3V : 900 V (A-type : 1000 V )
Vebo = 7 V
Ic = 24 A
Icm = 50 A (pulse < 10 ms)
Ib = 8 A
Ibm = 20 A (pulse < 10 ms)
Power Diss. = 150 W
Junction Temperature: 150 grdC
Thermal resistance junction to case: 0.83 grdC/W
Characteristics at 25grdC:
Vce sat at Ic=20 A, Ib=10A: max 2.5 V
Vce sat at Ic=12 A, Ib= 3A, Tcase = 100grdC.: max 1.8 V
Vbe sat at Ic=12A, Ib=3 A : max 2 V
Transit Frequency fT at f=1MHz, Ic=1A, Vce=10V : typ 5 MHz
C22b at f=1MHz, Vce=10V : typ 460 pF
Switching Times on resistive load, Vcc=300V, Ic=12A, Ib=-Ib=3A:
on : typ 0.4 us, max 0.8 us
Storage: typ 2.2 us, max 4 us
Fall: typ 0.35 us, max 0.7 us
Switching Times , inductive load, Vcc=300V, Ic=12A, LB=1.5uH, I Bend=3A,
Vb=-5V :
Storage : typ 3.5 us,
at 100grdC.: typ 4.2 us, max 7 us
Fall : typ 0.15 us
at 100grdC.: typ 0.33 us, max 0.6 us
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Without guaranty! Mistakes are possible. Please ask via email if you find a strange value!